BUK7107-40ATC /T3 NXP Semiconductors, BUK7107-40ATC /T3 Datasheet - Page 9

• Manufacturer Part Number: BUK7107-40ATC /T3
• Description: MOSFET TRENCHPLUS MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK7107-40ATC /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 140 A
• Resistance Drain-source Rds (on): 0.007 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-426
• Fall Time: 6800 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 272 W
• Rise Time: 5700 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 8900 ns
• Part # Aliases: BUK7107-40ATC,118

NXP Semiconductors
BUK7107-40ATC_2
Product data sheet
Fig 9.
Fig 11. Forward transconductance as a function of
V
GS(th)
(V)
g fs
(S)
80
60
40
20
0
5
4
3
2
1
0
−60
junction temperature
drain current; typical values
Gate-source threshold voltage as a function of
0
20
0
40
60
max
min
typ
60
120
80
T
I D (A)
j
(°C)
03ni68
03aa32
Rev. 02 — 6 February 2009
100
180
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
(A)
I
10
10
10
10
10
10
D
8000
6000
4000
2000
(pF)
−1
−2
−3
−4
−5
−6
C
gate-source voltage
as a function of drain-source voltage; typical
values
0
0
N-channel TrenchPLUS standard level FET
10 -2
10 -1
BUK7107-40ATC
2
C rss
min
1
typ
C iss
C oss
4
max
10
V
© NXP B.V. 2009. All rights reserved.
GS
V DS (V)
(V)
03aa35
03ni69
6
10 2
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