BUK7107-40ATC /T3 NXP Semiconductors, BUK7107-40ATC /T3 Datasheet - Page 4

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BUK7107-40ATC /T3

Manufacturer Part Number
BUK7107-40ATC /T3
Description
MOSFET TRENCHPLUS MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7107-40ATC /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
140 A
Resistance Drain-source Rds (on)
0.007 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-426
Fall Time
6800 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
272 W
Rise Time
5700 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
8900 ns
Part # Aliases
BUK7107-40ATC,118
NXP Semiconductors
BUK7107-40ATC_2
Product data sheet
Fig 1.
Fig 3.
P
(%)
(A)
I D
der
120
10 3
10 2
10
80
40
1
0
function of mounting base temperature
Normalized total power dissipation as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
1
Limit R DSon = V DS /I D
Capped at 75 A due to package
50
100
150
T
mb
03na19
(°C)
Rev. 02 — 6 February 2009
200
DC
10
Fig 2.
160
120
I D
(A)
80
40
function of mounting base temperature
Normalized continuous drain current as a
0
N-channel TrenchPLUS standard level FET
0
Capped at 75A due to package
50
BUK7107-40ATC
V DS (V)
100
t p = 10 µs
100 µs
1 ms
10 ms
100 ms
150
© NXP B.V. 2009. All rights reserved.
T mb (°C)
03ne75
03ni63
10 2
200
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