BUK7107-40ATC /T3 NXP Semiconductors, BUK7107-40ATC /T3 Datasheet - Page 11

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BUK7107-40ATC /T3

Manufacturer Part Number
BUK7107-40ATC /T3
Description
MOSFET TRENCHPLUS MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7107-40ATC /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
140 A
Resistance Drain-source Rds (on)
0.007 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-426
Fall Time
6800 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
272 W
Rise Time
5700 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
8900 ns
Part # Aliases
BUK7107-40ATC,118
NXP Semiconductors
BUK7107-40ATC_2
Product data sheet
Fig 17. Forward voltage of temperature sense diode as
Fig 19. Reverse diode current as a function of reverse diode voltage; typical values
(mV)
V
700
600
500
400
F
a function of junction temperature; typical
values
0
50
100
100
(A)
I S
80
60
40
20
150
0
0.0
T
j
(°C)
03ne84
0.2
Rev. 02 — 6 February 2009
200
0.4
175 °C
Fig 18. Temperature coefficient of temperature sense
0.6
(mV/K)
−1.70
−1.60
−1.50
−1.40
S
F
645
diode as a function of forward voltage; typical
values
0.8
T j = 25 °C
N-channel TrenchPLUS standard level FET
V SD (V)
03ni72
1.0
BUK7107-40ATC
655
max
min
typ
665
V
© NXP B.V. 2009. All rights reserved.
F
(mV)
03ne85
675
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