SI4818DY-E3 Vishay/Siliconix, SI4818DY-E3 Datasheet - Page 2
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SI4818DY-E3
Manufacturer Part Number
SI4818DY-E3
Description
MOSFET 30V 6.3/9.5A
Manufacturer
Vishay/Siliconix
Datasheet
1.SI4818DY-E3.pdf
(12 pages)
Specifications of SI4818DY-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
5.5 A, 7 A
Resistance Drain-source Rds (on)
22 mOhms, 15.5 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Fall Time
5 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W, 1.25 W
Rise Time
5 ns
Typical Turn-off Delay Time
26 ns at Channel 1, 44 ns at Channel 2
Si4818DY
Vishay Siliconix
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
MOSFET SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
SCHOTTKY SPECIFICATIONS T
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
a
b
b
b
b
Symbol
Symbol
R
V
I
t
t
I
I
D(on)
DS(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
R
I
V
C
t
J
t
rm
SD
t
rr
fs
gs
gd
r
f
g
g
F
T
= 25 °C, unless otherwise noted
J
= 25 °C, unless otherwise noted
V
V
V
I
I
DS
DS
D
D
DS
I
I
F
≅ 1 A, V
≅ 1 A, V
F
= 15 V, V
= 24 V, V
V
= 15 V, V
= 2.2 A, dI/dt = 100 µA/µs
V
V
V
V
V
V
V
V
V
V
V
= 1.3 A, dI/dt = 100 A/µs
I
DS
GS
GS
S
DS
DD
DD
DS
DS
GS
GS
DS
DS
I
S
= 1.3 A, V
V
= V
= 1 A, V
V
I
= 4.5 V, I
= 4.5 V, I
= 0 V, V
= 24 V, V
= 5 V, V
= 15 V, R
= 15 V, R
= 10 V, I
= 10 V, I
= 15 V, I
= 15 V, I
F
R
R
Channel-1
Channel-2
Channel-1
GEN
Channel-2
GEN
= 1.0 A, T
= - 30 V, T
Test Conditions
Test Conditions
GS
GS
= 30 V, T
GS
GS
, I
= 10 V, R
= 10 V, R
V
V
= 5 V, I
I
= 0 V, T
= 5 V, I
F
D
GS
R
R
GS
GS
D
D
D
D
GS
= 1.0 A
D
D
= 250 µA
GS
L
L
= 30 V
= 10 V
= 6.3 A
= 9.5 A
= 6.3 A
= 9.5 A
= 5.4 A
= 8.2 A
= 0 V
= 10 V
= 15 Ω
= 15 Ω
= 20 V
= 0 V
J
J
= 0 V
J
D
= 125 °C
= 100 °C
D
J
= 125 °C
= - 9.5 A
g
g
= 85 °C
= 6.3 A
= 6 Ω
= 6 Ω
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
Min.
0.8
1.0
1.5
0.5
20
30
0.0125
0.0165
Typ.
0.018
0.024
0.004
S09-0867-Rev. C, 18-May-09
Typ.
0.47
1.75
0.47
0.36
0.7
8.0
5.3
3.2
4.6
0.7
3.0
17
28
15
10
15
26
44
12
30
32
50
5
5
8
Document Number: 71122
a
0.0155
0.0205
0.022
0.030
0.100
Max.
2000
Max.
0.50
0.42
100
100
100
1.1
0.5
6.1
2.6
15
12
23
20
30
10
10
50
80
16
24
60
70
10
20
1
Unit
Unit
mA
nC
nA
µA
ns
pF
Ω
Ω
V
A
S
V
V