SI4818DY-E3 Vishay/Siliconix, SI4818DY-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4818DY-E3
• Description: MOSFET 30V 6.3/9.5A
• Manufacturer: Vishay/Siliconix

Specifications of SI4818DY-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.5 A, 7 A
• Resistance Drain-source Rds (on): 22 mOhms, 15.5 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 5 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1 W, 1.25 W
• Rise Time: 5 ns
• Typical Turn-off Delay Time: 26 ns at Channel 1, 44 ns at Channel 2

Si4818DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.6
0.4
0.2
0.0
40
10
- 50
1
0.01
0.0
0.1
2
1
10
- 25
Source-Drain Diode Forward Voltage
0.2
-4
0.05
Duty Cycle = 0.5
0.1
0.02
0.2
V
Single Pulse
SD
0
0.4
Threshold Voltage
T
- Source-to-Drain Voltage (V)
T
J
J
= 150 °C
- Temperature (°C)
25
10
0.6
-3
50
I
0.8
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
T
75
J
= 25 °C
1.0
100
10
-2
1.2
125
150
1.4
Square Wave Pulse Duration (s)
10
-1
0.10
0.08
0.06
0.04
0.02
0.00
100
80
60
40
20
1
0
0.001
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
2
V
0.01
GS
10
- Gate-to-Source Voltage (V)
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
4
Time (s)
- T
t
S09-0867-Rev. C, 18-May-09
A
0.1
1
I
D
= P
t
Document Number: 71122
2
= 6.3 A
DM
6
Z
thJA
100
thJA
t
t
1
2
(t)
= 100 °C/W
1
8
600
10
10