SI4818DY-E3 Vishay/Siliconix, SI4818DY-E3 Datasheet - Page 7

• Manufacturer Part Number: SI4818DY-E3
• Description: MOSFET 30V 6.3/9.5A
• Manufacturer: Vishay/Siliconix

Specifications of SI4818DY-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.5 A, 7 A
• Resistance Drain-source Rds (on): 22 mOhms, 15.5 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 5 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1 W, 1.25 W
• Rise Time: 5 ns
• Typical Turn-off Delay Time: 26 ns at Channel 1, 44 ns at Channel 2

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71122
S09-0867-Rev. C, 18-May-09
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.05
0.05
0.02
0.02
0.1
Duty Cycle = 0.5
0.2
0.2
Duty Cycle = 0.5
0.1
Single Pulse
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
- T
A
t
1
1
= P
t
2
DM
Vishay Siliconix
Z
thJA
thJA
100
(t)
t
t
1
2
Si4818DY
= 82 °C/W
www.vishay.com
600
10
7