SI4818DY-E3 Vishay/Siliconix, SI4818DY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4818DY-E3
• Description: MOSFET 30V 6.3/9.5A
• Manufacturer: Vishay/Siliconix

Specifications of SI4818DY-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.5 A, 7 A
• Resistance Drain-source Rds (on): 22 mOhms, 15.5 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 5 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1 W, 1.25 W
• Rise Time: 5 ns
• Typical Turn-off Delay Time: 26 ns at Channel 1, 44 ns at Channel 2

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71122
S09-0867-Rev. C, 18-May-09
0.05
0.04
0.03
0.02
0.01
0.00
30
24
18
12
10
6
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 6.3 A
On-Resistance vs. Drain Current
V
= 15 V
GS
2
6
3
V
= 10 V thru 4 V
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
12
4
6
1 V
3 V
V
GS
18
= 4.5 V
6
9
V
GS
2 V
= 10 V
24
12
8
10
30
15
1000
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
30
24
18
12
0
6
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
V
I
- 25
D
rss
0.5
GS
= 6.3 A
= 10 V
6
V
V
1.0
DS
GS
Transfer Characteristics
T
0
J
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
iss
25 °C
C
T
oss
C
1.5
25
Capacitance
= 125 °C
12
2.0
50
Vishay Siliconix
18
2.5
75
- 55 °C
Si4818DY
www.vishay.com
100
3.0
24
125
3.5
150
4.0
30
3