SI4818DY-E3 Vishay/Siliconix, SI4818DY-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4818DY-E3
• Description: MOSFET 30V 6.3/9.5A
• Manufacturer: Vishay/Siliconix

Specifications of SI4818DY-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.5 A, 7 A
• Resistance Drain-source Rds (on): 22 mOhms, 15.5 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 5 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1 W, 1.25 W
• Rise Time: 5 ns
• Typical Turn-off Delay Time: 26 ns at Channel 1, 44 ns at Channel 2

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71122
S09-0867-Rev. C, 18-May-09
0.030
0.024
0.018
0.012
0.006
0.000
40
32
24
16
8
0
0.01
0
0
0.1
2
1
10
-4
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
V
On-Resistance vs. Drain Current
GS
Single Pulse
2
8
V
= 10 V thru 4 V
DS
Output Characteristics
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
16
4
V
GS
10
= 4.5 V
-3
24
6
Normalized Thermal Transient Impedance, Junction-to-Foot
V
3 V
2 V
GS
= 10 V
32
8
10
40
Square Wave Pulse Duration (s)
10
-2
2500
2000
1500
1000
500
10
40
32
24
16
8
0
0
-1
0.0
0
C
0.5
rss
6
1.0
V
V
Transfer Characteristics
GS
C
DS
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
1.5
Capacitance
12
2.0
1
25 °C
C
Vishay Siliconix
T
iss
C
2.5
= 125 °C
18
Si4818DY
3.0
www.vishay.com
- 55 °C
3.5
24
4.0
10
4.5
30
5