FDC636P_F095 Fairchild Semiconductor
FDC636P_F095
Manufacturer Part Number
FDC636P_F095
Description
MOSFET -20V -2.8A P-CH ENHANCEMENT MODE
Manufacturer
Fairchild Semiconductor
Specifications of FDC636P_F095
Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.8 A
Configuration
Single Quad Drain
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SuperSOT-6
Fall Time
26 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1600 mW
Rise Time
26 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
8 ns
Related parts for FDC636P_F095
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
MOSFET P-CH 20V 2.8A SSOT-6
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: