NDS8435A_Q Fairchild Semiconductor, NDS8435A_Q Datasheet

NDS8435A_Q

Manufacturer Part Number

NDS8435A_Q

Description

MOSFET Single P-Ch FET Enhancement Mode

Manufacturer

Fairchild Semiconductor

Datasheet

1.NDS8435A_Q.pdf (7 pages)

Specifications of NDS8435A_Q

Product Category

MOSFET

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

- 7.9 A

Resistance Drain-source Rds (on)

0.02 Ohms

Configuration

Single Quad Drain Triple Source

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOIC-8 Narrow

Fall Time

46 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

2.5 W

Rise Time

20 ns

Typical Turn-off Delay Time

95 ns

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Absolute Maximum Ratings

___________________________________________________________________________________________

Symbol

THERMAL CHARACTERISTICS

NDS8435A

General Description

SO-8 P-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance and provide

superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer

power management and other battery powered circuits where

fast switching, low in-line power loss, and resistance to

transients are needed.

Single P-Channel Enhancement Mode Field Effect Transistor

DSS

GSS

STG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

Maximum Power Dissipation

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

- Pulsed

= 25°C unless otherwise noted

(Note 1a)

(

(Note 1a)

(Note 1b)

(Note 1c)

Note 1a)

(Note 1)

Features

-7.9 A, -30 V. R

High density cell design for extremely low R

High power and current handling capability in a widely used

surface mount package.

NDS8435A

DS(ON)

-55 to 150

-7.9

±20

-30

-25

2.5

1.2

= 0.035

= 0.023

@ V

= -4.5V.

= -10 V

DS(ON).

March 1997

NDS8435A Rev.C

Units

°C/W

°C

Related parts for NDS8435A_Q

NDS8435A_Q Summary of contents

Page 1

... Operating and Storage Temperature Range J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case JC © 1997 Fairchild Semiconductor Corporation Features -7 High density cell design for extremely low R High power and current handling capability in a widely used surface mount package 25° ...

Page 2

Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS Zero Gate Voltage Drain Current I DSS I Gate - Body Leakage, Forward GSSF Gate - Body Leakage, Reverse I GSSR ON ...

Page 3

Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous Drain-Source Diode Forward Current S V Drain-Source Diode Forward Voltage SD Notes the sum of the junction-to-case ...

Page 4

Typical Electrical Characteristics -30 -4.5 V =-10V GS -4.0 -6.0 -24 -3.5 -18 -3.0 - -0 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 1 -7. -10V ...

Page 5

Typical Electrical Characteristics 1.125 I = -250µA 1.1 D 1.075 1.05 1.025 1 0.975 0.95 0.925 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature ...

Page 6

Typical Electrical and ThermalCharacteristics 10V -12 - DRAIN CURRENT (A) D Figure 13. Transconductance Variation with Drain . Current and Temperature 8.5 8 7.5 7 6.5 ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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