NDS9407_D84Z Fairchild Semiconductor, NDS9407_D84Z Datasheet
NDS9407_D84Z
Manufacturer Part Number
NDS9407_D84Z
Description
MOSFET Single P-Ch MOSFET Power Trench
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDS9407_D84Z.pdf
(5 pages)
Specifications of NDS9407_D84Z
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3 A
Resistance Drain-source Rds (on)
0.15 Ohms
Configuration
Single Quad Drain Triple Source
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
10 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
2.5 W
Rise Time
11 ns
Typical Turn-off Delay Time
10 ns
NDS9407
60V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Power management
Load switch
Battery protection
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
NDS9407
Semiconductor’s
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
Pin 1
D
D
SO-8
D
advanced
D
– Continuous
– Pulsed
D
NDS9407
D
Device
Parameter
S
S
S
PowerTrench
S
S
S
G
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1c)
(Note 1)
Features
–3.0 A, –60 V.
Low gate charge
Fast switching speed
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
5
6
7
8
Tape width
–55 to +175
12mm
R
R
Ratings
DS(ON)
DS(ON)
–3.0
–60
–12
125
2.5
1.2
1.0
50
25
20
= 150 m
= 240 m
4
3
2
1
@ V
@ V
May 2002
2500 units
GS
GS
NDS9407 Rev B1(W)
Quantity
= –10 V
= –4.5 V
Units
C/W
W
V
V
A
C
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NDS9407_D84Z Summary of contents
Page 1
... JA Thermal Resistance, Junction-to-Case R JC Package Marking and Ordering Information Device Marking Device NDS9407 NDS9407 2002 Fairchild Semiconductor Corporation Features –3.0 A, –60 V. PowerTrench Low gate charge Fast switching speed High performance trench technology for extremely low R DS(ON) High power and current handling capability ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...
Page 3
Typical Characteristics -10V -6.0V GS -4.5V -4. DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 - -10V ...
Page 4
Typical Characteristics - GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 10 R LIMIT DS(ON) 1 10s V = -10V ...
Page 5
CROSSVOLT â â â â Rev. H5 ...