FDG326P_Q Fairchild Semiconductor, FDG326P_Q Datasheet - Page 11

• Manufacturer Part Number: FDG326P_Q
• Description: MOSFET SC70-6 P-CH -20V
• Manufacturer: Fairchild Semiconductor

Specifications of FDG326P_Q

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: - 1.5 A
• Resistance Drain-source Rds (on): 0.14 Ohms
• Configuration: Single Quad Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70-6
• Fall Time: 13 ns
• Forward Transconductance Gfs (max / Min): 5.3 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.75 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 18 ns

© 2006 Fairchild Semiconductor Corporation
FAN5631/FAN5632 Rev. 1.0.2
Physical Dimensions
C. DIMENSIONSAND TOLERANCESPER
B. DIMENSIONSARE IN MILLIMETERS.
D. LAND PATTERN DIMENSIONSARE NOMINAL
A. CONFORMS TO JEDEC REGISTRATION MO-229,
REFERENCEVALUES ONLY
MLP10BrevA
ASME Y14.5M, 1994
VARIATION WEED-5
0.08 C
PIN #1 IDENT
0.8 MAX
0.10 C
2X
1.55±0.05
SEATING
PLANE
0.40±0.05
0.05
0.00
0.15 C
0.5
10
1
Figure 17.
BOTTOM VIEW
SIDE VIEW
(3.00±0.10)
TOP VIEW
2.25±0.05
(0.38)
2.0
3.0
0.30
0.20
10-lead, Molded Leadless Package (MLP)
5
6
(3.00±0.10)
3.0
B
A
2X
(0.20)
0.10
0.05
C
11
0.15 C
C A B
C
RECOMMENDED LAND PATTERN
D
0.23
1
10
0.02
2.25
2.20
2.00
0.50
6
5
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0.25