FDN358P_Q Fairchild Semiconductor
FDN358P_Q
Manufacturer Part Number
FDN358P_Q
Description
MOSFET SSOT-3 P-CH -30V
Manufacturer
Fairchild Semiconductor
Specifications of FDN358P_Q
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 1.5 A
Resistance Drain-source Rds (on)
0.125 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SSOT-3
Fall Time
13 ns
Forward Transconductance Gfs (max / Min)
3.5 S
Minimum Operating Temperature
- 55 C
Power Dissipation
0.5 W
Rise Time
13 ns
Typical Turn-off Delay Time
12 ns
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