NDB6060L_Q Fairchild Semiconductor, NDB6060L_Q Datasheet - Page 6

• Manufacturer Part Number: NDB6060L_Q
• Description: MOSFET N-Ch LL FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDB6060L_Q

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 48 A
• Resistance Drain-source Rds (on): 0.025 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB
• Fall Time: 161 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 100 W
• Rise Time: 320 ns
• Typical Turn-off Delay Time: 49 ns

Typical Electrical Characteristics
0.05
0.03
0.02
0.01
4 0
3 0
2 0
1 0
0
0.5
0.3
0.2
0.1
Figure 13. Transconductance Variation with
0
1
0.01
0.05
0.02
0.01
0.1
Drain Current. and Temperature
0.02
0.2
T = -55°C
J
D = 0.5
1 0
Single Pulse
0.05
I
D
, DRAIN CURRENT (A)
25°C
0.1
Figure 15. Transient Thermal Response Curve.
2 0
125°C
0.2
(continued)
3 0
0.5
V
DS
=10V
1
4 0
2
t ,TIME (m s)
1
3 0 0
2 0 0
1 0 0
5 0
2 0
1 0
5
2
1
1
5
Figure 14. Maximum Safe Operating. Area
R
SINGLE PULSE
10
T
2
JC
V
C
GS
= 1.5 C/W
= 25°C
= 5V
3
V
20
DS
o
, DRAIN-SOURCE VOLTAGE (V)
5
50
P(pk)
1 0
T - T
R
Duty Cycle, D = t /t
J
100
R
JC
t
1
C
JC
(t) = r(t) * R
2 0
t
= P * R
NDP6060L Rev. D / NDB6060L Rev. E
2
= 1.5 °C/W
200
3 0
JC
1
JC
(t)
2
6 0
500
1 0 0
1000