FDG6316P_Q Fairchild Semiconductor
FDG6316P_Q
Manufacturer Part Number
FDG6316P_Q
Description
MOSFET P-Ch PowerTrench Specified 1.8V
Manufacturer
Fairchild Semiconductor
Specifications of FDG6316P_Q
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
- 0.7 A
Resistance Drain-source Rds (on)
0.27 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-70-6
Fall Time
13 ns
Forward Transconductance Gfs (max / Min)
2.5 S
Minimum Operating Temperature
- 55 C
Power Dissipation
0.3 W
Rise Time
13 ns
Typical Turn-off Delay Time
8 ns
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