NDS9956A_Q Fairchild Semiconductor, NDS9956A_Q Datasheet - Page 3

• Manufacturer Part Number: NDS9956A_Q
• Description: MOSFET Dual N-Ch FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9956A_Q

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: +/- 3.7 A
• Resistance Drain-source Rds (on): 0.08 Ohms
• Configuration: Dual Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 5 ns
• Forward Transconductance Gfs (max / Min): 6 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 21 ns

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
t
Notes:
1. R
S
rr
SD
P
design while R
Typical R
D
JA
t
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
R
T
a. 78
b. 125
c. 135
Scale 1 : 1 on letter size paper
JA
J
1a
J A
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
T
A
t
Parameter
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
o
CA
C/W when mounted on a 0.5 in
o
o
C/W when mounted on a 0.02 in
C/W when mounted on a 0.003 in
is determined by the user's board design.
R
J C
T
J
R
T
A
CA
t
I
2
D
t
R
2
DS ON
pad of 2oz cpper.
(T
2
pad of 2oz cpper.
2
pad of 2oz cpper.
A
= 25°C unless otherwise noted)
T
J
1b
Conditions
V
V
GS
GS
= 0 V, I
= 0 V, I
F
S
= 1.25 A, dI
= 1.25 A
(Note 2)
F
/dt = 100 A/µs
1c
Min
Typ
0.8
Max
JC
100
1.2
1.3
is guaranteed by
NDS9956A.SAM
Units
ns
A
V