KSC2330OSHTA Fairchild Semiconductor, KSC2330OSHTA Datasheet - Page 3

• Manufacturer Part Number: KSC2330OSHTA
• Description: Transistors Bipolar - BJT NPN Si Transistor Epitaxial
• Manufacturer: Fairchild Semiconductor

Specifications of KSC2330OSHTA

• Product Category: Transistors Bipolar - BJT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 300 V
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 300 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 50 MHz
• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92L
• Dc Current Gain Hfe Max: 240
• Maximum Power Dissipation: 1 W
• Minimum Operating Temperature: - 55 C

©2002 Fairchild Semiconductor Corporation
Package Dimensions
0.50
0.10
4.90
3.90
0.20
0.20
0.80
[1.27
TO-92L
0.70MAX.
1.00MAX.
2.54 TYP
1.27TYP
0.10
0.20
]
0.45
Dimensions in Millimeters
0.10
Rev. A2, September 2002