BC857BM T/R NXP Semiconductors, BC857BM T/R Datasheet

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BC857BM T/R

Manufacturer Part Number
BC857BM T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC857BM T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
220 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-883
Continuous Collector Current
0.1 A
Maximum Power Dissipation
430 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BC857BM,315
Product data sheet
Supersedes data of 2003 Jul 15
DATA SHEET
BC857M series
PNP general purpose transistors
BOTTOM VIEW
DISCRETE SEMICONDUCTORS
M3D883
2004 Mar 10

Related parts for BC857BM T/R

BC857BM T/R Summary of contents

Page 1

... DATA SHEET BOTTOM VIEW BC857M series PNP general purpose transistors Product data sheet Supersedes data of 2003 Jul 15 DISCRETE SEMICONDUCTORS M3D883 2004 Mar 10 ...

Page 2

... NXP Semiconductors PNP general purpose transistors FEATURES • Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) • Board space 1.3 × 0.9 mm • Power dissipation comparable to SOT23. APPLICATIONS • General purpose small signal DC • Low and medium frequency AC applications • Mobile communications, digital (still) cameras, PDAs, PCMCIA cards ...

Page 3

... NXP Semiconductors PNP general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation ...

Page 4

... NXP Semiconductors PNP general purpose transistors CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE BC857AM BC857BM BC857CM V base-emitter voltage BE V collector-emitter saturation voltage CEsat C collector capacitance c f transition frequency T F noise figure Note ≤ ...

Page 5

... NXP Semiconductors PNP general purpose transistors GRAPHICAL INFORMATION BC857AM 500 handbook, halfpage h FE 400 (1) 300 (2) 200 (3) 100 0 −2 −1 −10 −10 −1 = − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain; typical values. −10 ...

Page 6

... NXP Semiconductors PNP general purpose transistors GRAPHICAL INFORMATION BC857BM 1000 handbook, halfpage h FE 800 600 (1) 400 (2) 200 (3) 0 −2 −1 −10 −10 −1 = − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.6 DC current gain; typical values. ...

Page 7

... NXP Semiconductors PNP general purpose transistors GRAPHICAL INFORMATION BC857CM 1000 handbook, halfpage h FE (1) 800 600 (2) 400 (3) 200 0 −2 −1 −10 −10 −1 = − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.10 DC current gain; typical values. −10 ...

Page 8

... NXP Semiconductors PNP general purpose transistors PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0 DIMENSIONS (mm are the original dimensions) A (1) 1 UNIT max. 0.50 0.20 0.55 mm 0.03 0.46 0.12 0.47 Note 1. Including plating thickness OUTLINE VERSION IEC SOT883 2004 Mar ...

Page 9

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 10

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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