BC857BM T/R NXP Semiconductors, BC857BM T/R Datasheet - Page 5

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BC857BM T/R

Manufacturer Part Number
BC857BM T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC857BM T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
220 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-883
Continuous Collector Current
0.1 A
Maximum Power Dissipation
430 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BC857BM,315
NXP Semiconductors
GRAPHICAL INFORMATION BC857AM
2004 Mar 10
handbook, halfpage
handbook, halfpage
PNP general purpose transistors
V CEsat
V
(1) T
(2) T
(3) T
I
(1) T
(2) T
(3) T
Fig.4
C
(mV)
CE
/I
h FE
B
−10
−10
−10
500
400
300
200
100
−10
= −5 V.
= 20.
amb
amb
amb
−10
amb
amb
amb
−10
0
4
3
2
Fig.2 DC current gain; typical values.
−1
−2
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
(1)
(2)
(3)
−1
−1
(2)
−1
−10
(1)
(3)
−10
−10
−10
2
I C (mA)
I C (mA)
2
MLE188
MLE190
−10
−10
3
3
5
handbook, halfpage
handbook, halfpage
V BEsat
V
(1) T
(2) T
(3) T
Fig.3
I
(1) T
(2) T
(3) T
Fig.5
C
(mV)
−1200
−1000
−1200
−1000
CE
(mV)
V BE
/I
−800
−600
−400
−200
−800
−600
−400
−200
B
= −5 V.
= 20.
−10
amb
amb
amb
amb
amb
amb
−10
−2
= −55 °C.
= 25 °C.
= 150 °C.
= −55 °C.
= 25 °C.
= 150 °C.
Base-emitter voltage as a function of
collector current; typical values.
−1
Base-emitter saturation voltage as a
function of collector current; typical values.
−10
−1
−1
−1
(2)
(3)
(1)
−10
(1)
(2)
(3)
−10
BC857M series
−10
Product data sheet
−10
2
I C (mA)
I C (mA)
2
MLE189
MLE191
−10
−10
3
3

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