BC857BM T/R NXP Semiconductors, BC857BM T/R Datasheet - Page 6

• Manufacturer Part Number: BC857BM T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BC857BM T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 220 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-883
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 430 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC857BM,315

NXP Semiconductors
GRAPHICAL INFORMATION BC857BM
2004 Mar 10
handbook, halfpage
handbook, halfpage
PNP general purpose transistors
V CEsat
V
(1) T
(2) T
(3) T
I
(1) T
(2) T
(3) T
Fig.8
C
(mV)
CE
/I
h FE
1000
B
−10
−10
−10
800
600
400
200
−10
= −5 V.
= 20.
−10
amb
amb
amb
−10
amb
amb
amb
0
4
3
2
Fig.6 DC current gain; typical values.
−2
−1
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
(1)
(2)
(3)
−1
−1
(2)
−1
−10
(1)
(3)
−10
−10
−10
2
I C (mA)
I C (mA)
2
MLE192
MLE194
−10
−10
3
3
6
handbook, halfpage
handbook, halfpage
V BEsat
V
(1) T
(2) T
(3) T
Fig.7
I
(1) T
(2) T
(3) T
Fig.9
C
(mV)
−1200
−1000
−1200
−1000
CE
/I
(mV)
V BE
−800
−600
−400
−200
−800
−600
−400
−200
B
= −5 V.
= 20.
−10
amb
amb
amb
amb
amb
amb
−10
−2
= −55 °C.
= 25 °C.
= 150 °C.
= −55 °C.
= 25 °C.
= 150 °C.
−1
Base-emitter voltage as a function of
collector current; typical values.
Base-emitter saturation voltage as a
function of collector current; typical values.
−10
−1
−1
−1
(2)
(3)
(1)
−10
(1)
(2)
(3)
−10
BC857M series
−10
Product data sheet
−10
2
I C (mA)
I C (mA)
2
MLE193
MLE195
−10
−10
3
3