BC857BM T/R NXP Semiconductors, BC857BM T/R Datasheet - Page 2

• Manufacturer Part Number: BC857BM T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BC857BM T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 220 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-883
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 430 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC857BM,315

NXP Semiconductors
FEATURES
• Leadless ultra small plastic package
• Board space 1.3 × 0.9 mm
• Power dissipation comparable to SOT23.
APPLICATIONS
• General purpose small signal DC
• Low and medium frequency AC applications
• Mobile communications, digital (still) cameras, PDAs,
DESCRIPTION
PNP general purpose transistor in a SOT883 leadless ultra
small plastic package.
NPN complement: BC847M series.
MARKING
ORDERING INFORMATION
2004 Mar 10
BC857AM
BC857BM
BC857CM
BC857AM
BC857BM
BC857CM
TYPE NUMBER
(1 mm × 0.6 mm × 0.5 mm)
PCMCIA cards.
PNP general purpose transistors
TYPE NUMBER
NAME
−
MARKING CODE
Leadless ultra small plastic package; 3 solder lands; body
1.0 x 0.6 x 0.5 mm
D1
D2
D3
2
DESCRIPTION
QUICK REFERENCE DATA
PINNING
V
I
I
handbook, halfpage
C
CM
SYMBOL
PACKAGE
CEO
PIN
Fig.1 Simplified outline (SOT883) and symbol.
1
2
3
2
1
Bottom view
collector-emitter voltage
collector current (DC)
peak collector current
base
emitter
collector
PARAMETER
DESCRIPTION
3
BC857M series
MAM469
Product data sheet
1
−45
−100
−200
MAX.
VERSION
3
SOT883
2
V
mA
mA
UNIT