BC857BM T/R NXP Semiconductors, BC857BM T/R Datasheet - Page 4

• Manufacturer Part Number: BC857BM T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BC857BM T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 220 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-883
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 430 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC857BM,315

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Mar 10
I
I
h
V
V
C
f
F
SYMBOL
amb
CBO
EBO
T
FE
BE
CEsat
PNP general purpose transistors
c
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
base-emitter voltage
collector-emitter saturation voltage
collector capacitance
transition frequency
noise figure
BC857AM
BC857BM
BC857CM
p
≤ 300 μs; δ ≤ 0.02.
PARAMETER
V
V
V
V
I
I
I
I
I
V
f = 100 MHz
I
R
C
C
C
C
E
C
CB
CB
EB
CE
CE
S
= i
= −2 mA; V
= −10 mA; V
= −10 mA; I
= −100 mA; I
= −200 μA; V
= 2 kΩ; f = 1 kHz; B = 200 Hz
= −5 V; I
= −30 V; I
= −30 V; I
= −5 V; I
= −5 V; I
e
= 0; V
4
CONDITIONS
CB
C
C
C
CE
E
E
B
= 0
= −2 mA
= −10 mA;
CE
B
= −10 V; f = 1 MHz
CE
= 0
= 0; T
= −0.5 mA
= −5 V
= −5 mA; note 1
= −5 V
= −5 V;
j
= 150 °C
−
−
−
125
220
420
−600
−
−
−
−
100
−
MIN.
BC857M series
−15
−5
−100
250
475
800
−750
−820
−200
−400
2.5
−
10
Product data sheet
MAX.
nA
μA
nA
mV
mV
mV
mV
pF
MHz
dB
UNIT