2N6519TA_Q Fairchild Semiconductor
2N6519TA_Q
Manufacturer Part Number
2N6519TA_Q
Description
Transistors Bipolar - BJT PNP Si Transistor Epitaxial
Manufacturer
Fairchild Semiconductor
Specifications of 2N6519TA_Q
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
- 300 V
Collector- Emitter Voltage Vceo Max
- 300 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
- 300 V
Maximum Dc Collector Current
0.5 A
Gain Bandwidth Product Ft
200 MHz
Dc Collector/base Gain Hfe Min
30
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Continuous Collector Current
- 0.5 A
Maximum Power Dissipation
625000 mW
Minimum Operating Temperature
- 55 C
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