2N6519 Fairchild Semiconductor, 2N6519 Datasheet
2N6519
Manufacturer Part Number
2N6519
Description
PNP Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N6519.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N6519
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
©2003 Fairchild Semiconductor Corporation
High Voltage Transistor
• Collector-Emitter Voltage: V
• Collector Dissipation: P
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: Pulse Width 300 s, Duty Cycle 2%
Refer to 2N6520 for graphs
V
V
V
I
I
P
T
T
BV
BV
BV
I
I
h
V
V
V
f
C
C
t
t
C
B
CBO
EBO
T
ON
OFF
FE
J
STG
Symbol
CE
BE
BE
CBO
CEO
EBO
C
ob
EB
CBO
CEO
EBO
Symbol
(sat)
(sat)
(on)
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
* Current Gain Bandwidth Product
Output Capacitance
Emitter-Base Capacitance
Turn On Time
Turn Off Time
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Derate above 25 C
Junction Temperature
Storage Temperature
C
(max)=625mW
CEO
Parameter
= -300V
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
2N6519
I
I
I
V
V
V
V
V
V
V
I
I
I
I
I
I
I
V
V
V
V
V
I
V
I
C
C
E
C
C
C
C
C
C
C
C
B1
CB
EB
CE
CE
CE
CE
CE
CE
CE
CB
EB
BE
CC
= -100 A, I
= -1mA, I
= -10 A, I
= -10mA, I
= -20mA, I
= -30mA, I
= -50mA, I
= -10mA, I
= -20mA, I
= -30mA, I
= -50mA, I
=I
= -4V, I
= -0.5V, I
= -200V, I
= -10V, I
= -10V, I
= -10V, I
= -10V, I
= -10V, I
= -10V, I
= -20V, I
= -20V, I
= -100V, I
(off)= -2V, V
B2
=10mA
Test Condition
C
B
C
=0
=0
C
C
C
C
C
B
B
B
B
B
B
B
C
C
E
B1
=0
C
E
E
= -1mA
= -10mA
= -30mA
= -50mA
= -100mA
= -1mA
= -2mA
= -3mA
= -5mA
= -1mA
= -2mA
= -3mA
= -100mA
= -10mA, f=20MHz
=0, f=1MHz
=0
=0, f=1MHz
= -10mA
C
=0
= -50mA
CC
= -100V
1. Emitter 2. Base 3. Collector
1
-55 ~ 150
Value
-300
-300
-500
-250
625
150
-5
5
Min.
-300
-300
30
45
45
40
20
40
-5
TO-92
Max.
-0.30
-0.35
-0.50
-0.75
-0.85
-0.90
270
200
200
100
200
-50
-50
3.5
-1
-2
6
Rev. B2, Jnauary 2003
mW/ C
Units
mA
mA
W
V
V
V
C
C
Units
MHz
nA
nA
pF
pF
ns
ns
V
V
V
V
V
V
V
V
V
V
V
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2N6519 Summary of contents
Page 1
... T C Output Capacitance ob C Emitter-Base Capacitance EB t Turn On Time ON t Turn Off Time OFF * Pulse Test: Pulse Width 300 s, Duty Cycle 2% ©2003 Fairchild Semiconductor Corporation 2N6519 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -100 -1mA, I ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2003 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B2, Jnauary 2003 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...