FJA4310YTU Fairchild Semiconductor, FJA4310YTU Datasheet

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FJA4310YTU

Manufacturer Part Number
FJA4310YTU
Description
Transistors Bipolar - BJT NPN Si Transistor Epitaxial
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FJA4310YTU

Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
200 V
Collector- Emitter Voltage Vceo Max
140 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
10 A
Gain Bandwidth Product Ft
30 MHz
Dc Collector/base Gain Hfe Min
90
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-3P
Maximum Power Dissipation
100000 mW
Minimum Operating Temperature
- 55 C
FJA4310 Rev. C1
© 2008 Fairchild Semiconductor Corporation
FJA4310
NPN Epitaxial Silicon Transistor
• Audio Power Amplifier
• High Current Capability : I
• High Power Dissipation
• Wide S.O.A
• Complement to FJA4210
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics*
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
h
V
V
V
I
I
P
T
T
BV
BV
BV
I
I
h
V
C
f
C
B
CBO
EBO
T
FE
CBO
CEO
EBO
C
J
STG
FE
CE
Symbol
ob
CBO
CEO
EBO
(sat)
Classification
Symbol
Classification
h
FE
*
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
DC Current Gain
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Base Current (DC)
Collector Dissipation (T
Junction Temperature
Storage Temperature
C
=10A
Parameter
T
50 ~ 100
a
=25°C unless otherwise noted
C
R
T
=25°C)
a
= 25°C unless otherwise noted
Parameter
1.Base 2.Collector 3.Emitter
1
1
I
I
I
V
V
V
I
V
V
C
C
E
C
CB
EB
CE
CB
CE
=5mA, I
=5mA, I
=50mA, R
=5A, I
TO-3P
=6V, I
=200V, I
=4V, I
=10V, f=1MHz
=5V, I
Test Condition
B
=0.5A
E
C
C
C
C
70 ~ 140
=0
=0
=0
=3A
=1A
BE
E
=0
O
Min.
200
140
50
6
- 55 ~ 150
Ratings
200
140
100
150
1.5
10
6
Typ.
250
30
90 ~ 180
Max.
Y
180
0.5
10
10
www.fairchildsemi.com
October 2008
Units
°C
°C
W
V
V
V
A
A
Units
MHz
mA
mA
pF
V
V
V
V

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FJA4310YTU Summary of contents

Page 1

... Output Capacitance ob f Current Gain Bandwidth Product T * Pulse Test: Pulse Width£300ms, Duty Cycle£2% h Classification FE Classification h FE © 2008 Fairchild Semiconductor Corporation FJA4310 Rev. C1 TO-3P 1 1.Base 2.Collector 3.Emitter T = 25°C unless otherwise noted a Parameter =25° =25°C unless otherwise noted ...

Page 2

... Figure 3. V (sat) vs 125 C 0 0.0 0.5 V [V], Base-Emitter On VOLTAGE BE Figure 5. Base-Emitter On Voltage © 2008 Fairchild Semiconductor Corporation FJA4310 Rev 250mA 200mA 150mA 100mA 50mA 20mA ...

Page 3

... Typical Characteristics 140 120 100 C], CASE TEMPERATURE C Figure 7. Power Derating © 2008 Fairchild Semiconductor Corporation FJA4310 Rev. C1 (Continued) 100 125 150 175 3 www.fairchildsemi.com ...

Page 4

... Package Dimension (TO-3P) NOTES: A) THIS PACKAGE CONFORMS TO EIAJ B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONING AND TOLERANCING PER D) DIMENSIONS ARE EXCLUSIVE OF BURRS, E) DRAWING FILE NAME: TO3P03AREV2. © 2008 Fairchild Semiconductor Corporation FJA4310 Rev. C1 15.80 15.40 5.20 4.80 3.70 3.30 (1.85) 2.20 1.80 3.20 2.80 1.20 0.55 0. 5.45 5.45 (R0.50) SC-65 PACKAGING STANDARD. ASME14.5 1973. MOLD FLASH, AND TIE BAR EXTRUSIONS. ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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