FJN965TA_Q Fairchild Semiconductor
FJN965TA_Q
Manufacturer Part Number
FJN965TA_Q
Description
Transistors Bipolar - BJT NPN Si Transistor Epitaxial
Manufacturer
Fairchild Semiconductor
Specifications of FJN965TA_Q
Product Category
Transistors Bipolar - BJT
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
40 V
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
7 V
Collector-emitter Saturation Voltage
20 V
Maximum Dc Collector Current
5 A
Gain Bandwidth Product Ft
150 MHz
Dc Collector/base Gain Hfe Min
230
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Continuous Collector Current
5 A
Dc Current Gain Hfe Max
600
Maximum Power Dissipation
0.75 W
Minimum Operating Temperature
- 55 C
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