IDT7005L35G IDT, Integrated Device Technology Inc, IDT7005L35G Datasheet

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IDT7005L35G

Manufacturer Part Number
IDT7005L35G
Description
IC SRAM 64KBIT 35NS 68PGA
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet

Specifications of IDT7005L35G

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Asynchronous
Memory Size
64K (8K x 8)
Speed
35ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
68-PGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
7005L35G

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Manufacturer
Quantity
Price
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IDT7005L35G
Manufacturer:
IDT
Quantity:
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Part Number:
IDT7005L35GB
Manufacturer:
IDT
Quantity:
200
Features
Functional Block Diagram
NOTES:
1. (MASTER): BUSY is output; (SLAVE): BUSY is input.
2. BUSY outputs and INT outputs are non-tri-stated push-pull.
©2008 Integrated Device Technology, Inc.
True Dual-Ported memory cells which allow simultaneous
reads of the same memory location
High-speed access
– Military: 20/25/35/55/70ns (max.)
– Industrial: 35/55ns (max.)
– Commercial:15/17/20/25/35/55ns (max.)
Low-power operation
– IDT7005S
– IDT7005L
IDT7005 easily expands data bus width to 16 bits or more
using the Master/Slave select when cascading more than
one device
I/O
Active: 750mW (typ.)
Standby: 5mW (typ.)
Active: 700mW (typ.)
Standby: 1mW (typ.)
0L
BUSY
- I/O
SEM
R/W
A
INT
OE
CE
A
12L
0L
7L
L
L
L
L
L
L
(1,2)
(2)
Decoder
Address
R/W
OE
CE
L
L
L
13
HIGH-SPEED
8K x 8 DUAL-PORT
STATIC RAM
Control
I/O
ARBITRATION
SEMAPHORE
INTERRUPT
MEMORY
ARRAY
LOGIC
M/S
1
M/S = H for BUSY output flag on Master,
M/S = L for BUSY input on Slave
Interrupt Flag
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Devices are capable of withstanding greater than 2001V
electrostatic discharge
Battery backup operation—2V data retention
TTL-compatible, single 5V (±10%) power supply
Available in 68-pin PGA, quad flatpack, PLCC, and a 64-pin
thin quad flatpack
Industrial temperature range (-40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
Control
I/O
13
Decoder
Address
CE
OE
R/W
R
R
R
OCTOBER 2008
IDT7005S/L
2738 drw 01
OE
CE
R/W
I/O
BUSY
A
A
SEM
INT
12R
0R
R
0R
R
R
R
R
(2)
-I/O
R
DSC 2738/16
(1,2)
7R

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IDT7005L35G Summary of contents

Page 1

... Features True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Military: 20/25/35/55/70ns (max.) – Industrial: 35/55ns (max.) – Commercial:15/17/20/25/35/55ns (max.) Low-power operation – IDT7005S Active: 750mW (typ.) Standby: 5mW (typ.) – IDT7005L Active: 700mW (typ.) Standby: 1mW (typ ...

Page 2

... This device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. ...

Page 3

IDT7005S/L High-Speed Dual-Port Static RAM Pin Configurations (1,2,3) 11/19/ 11L 10L ...

Page 4

... Package only). 2. 3dV references the interpolated capacitance when the input and output signals switch from from 3V to 0V. Military, Industrial and Commercial Temperature Ranges Outputs I/O 0-7 High-Z Deselected: Power-Down DATA Write to Memory IN DATA Read Memory OUT High-Z Outputs Disabled Outputs I/O 0-7 ...

Page 5

IDT7005S/L High-Speed Dual-Port Static RAM DC Electrical Characteristics Over the 0perating Temperature and Supply Voltage Range Symbol Parameter ( Input Leakage Current Output Leakage Current LO V Output Low Voltage OL V ...

Page 6

IDT7005S/L High-Speed Dual-Port Static RAM DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Symbol Parameter Dynamic Operating Current CC , Outputs Disabled IL SEM = V (Both Ports Active) IH ...

Page 7

IDT7005S/L High-Speed Dual-Port Static RAM AC Test Conditions Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Symbol Parameter READ ...

Page 8

IDT7005S/L High-Speed Dual-Port Static RAM Waveform of Read Cycles ADDR CE OE R/W DATA OUT BUSY OUT NOTES: 1. Timing depends on which signal is asserted last CE. 2. Timing depends on which signal is ...

Page 9

IDT7005S/L High-Speed Dual-Port Static RAM AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Symbol Parameter WRITE CYCLE t Write Cycle Time WC (3) t Chip Enable to End-of-Write EW t Address Valid to End-of-Write AW ...

Page 10

... access RAM SEM = V To access semaphore and . IH IL Military, Industrial and Commercial Temperature Ranges ( ( ( LOW CE and a LOW R/W for memory array writing cycle and SEM = 6.42 10 (1,5, (1,5) ( allow the I/O drivers to turn off and data to be placed WZ DW must be met for either condition ...

Page 11

IDT7005S/L High-Speed Dual-Port Static RAM Timing Waveform of Semaphore Read after Write Timing, Either Side VALID ADDRESS SEM DATA R/W OE Write Cycle NOTE ...

Page 12

IDT7005S/L High-Speed Dual-Port Static RAM AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Symbol Parameter BUSY TIMING (M/S BUSY Access Time from Address Match t BAA BUSY Disable Time from Address Not ...

Page 13

IDT7005S/L High-Speed Dual-Port Static RAM Timing Waveform of Write with Port-to-Port Read with BUSY (M (4) IH ADDR "A" R/W "A" DATA IN "A" (1) t APS ADDR "B" BUSY "B" DATA OUT "B" ...

Page 14

IDT7005S/L High-Speed Dual-Port Static RAM Waveform of BUSY Arbitration Controlled by CE Timing ADDR "A" and "B" CE "A" (2) t APS CE "B" BUSY "B" Waveform of BUSY Arbitration Cycle Controlled by Address Match Timing (M/S ...

Page 15

IDT7005S/L High-Speed Dual-Port Static RAM Waveform of Interrupt Timing ADDR "A" ( "A" R/W "A" INT "B" ADDR "B" "B" OE "B" INT "B" NOTES: 1. All timing is the same ...

Page 16

... The message (8 bits) at 1FFE or 1FFF is user-defined, since addressable SRAM location. If the interrupt function is not used, address locations 1FFE and 1FFF are not used as mail boxes, but as part of the random access memory. Refer to Truth Table III for the interrupt operation. 6.42 ...

Page 17

IDT7005S/L High-Speed Dual-Port Static RAM BUSY (L) Figure 3. Busy and chip enable routing for both width and depth expansion with IDT7005 RAMs. Busy Logic Busy Logic provides a hardware indication that both ports of the RAM ...

Page 18

... IDT7005’s Dual-Port RAM. Say the RAM was to be divided into two blocks which were to be dedicated at any one time to servicing either the left or right port. Semaphore 0 could be used to indicate the side which would control the lower section of memory, and 6.42 18 ...

Page 19

... Semaphores are a useful form of arbitration in systems like disk interfaces where the CPU must be locked out of a section of memory during a transfer and the I/O device cannot tolerate any wait states. With the use of semaphores, once the two devices has determined which memory area was “ ...

Page 20

IDT7005S/L High-Speed Dual-Port Static RAM Ordering Information XXXXX A 999 A Device Power Speed Package Type NOTES: 1. Industrial temperature range is available on selected TQFP packages in standard power. For other speeds, packages and powers contact ...

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