UPD44164362AF5-E33-EQ2 Renesas Electronics America, UPD44164362AF5-E33-EQ2 Datasheet - Page 15

• Manufacturer Part Number: UPD44164362AF5-E33-EQ2
• Description: SRAM DDRII 18MBIT CIO 165-PBGA
• Manufacturer: Renesas Electronics America

Specifications of UPD44164362AF5-E33-EQ2

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 18M (512K x 36)
• Speed: 300MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

[
Remarks 1. H : HIGH, L : LOW, → : rising edge.
μ
Write DQ0 to DQ35
Write DQ0 to DQ8
Write DQ9 to DQ17
Write DQ18 to DQ26
Write DQ27 to DQ35
Write nothing
PD44164362A-A]
Operation
2. Assumes a WRITE cycle was initiated. BW0# to BW3# can be altered for any portion of the BURST
WRITE operation provided that the setup and hold requirements are satisfied.
μ
PD44164082A-A, 44164092A-A, 44164182A-A, 44164362A-A
L → H
L → H
L → H
L → H
L → H
L → H
K
–
–
–
–
–
–
Data Sheet M19866EJ1V0DS
L → H
L → H
L → H
L → H
L → H
L → H
K#
–
–
–
–
–
–
BW0#
0
0
0
0
1
1
1
1
1
1
1
1
BW1#
0
0
1
1
0
0
1
1
1
1
1
1
BW2#
0
0
1
1
1
1
0
0
1
1
1
1
BW3#
0
0
1
1
1
1
1
1
0
0
1
1
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