MT41J64M16LA-15E:B TR Micron Technology Inc, MT41J64M16LA-15E:B TR Datasheet - Page 30
![IC DDR3 SDRAM 1GBIT 96FBGA](/photos/7/23/72317/mfg557-60-fbga_sml.jpg)
MT41J64M16LA-15E:B TR
Manufacturer Part Number
MT41J64M16LA-15E:B TR
Description
IC DDR3 SDRAM 1GBIT 96FBGA
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Specifications of MT41J64M16LA-15E:B TR
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
1G (64M x 16)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
96-FBGA
Organization
64Mx16
Density
1Gb
Address Bus
16b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
355mA
Pin Count
96
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Electrical Specifications
Absolute Ratings
Table 6: Absolute Maximum Ratings
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
V
Symbol
IN
V
T
V
, V
DDQ
T
STG
DD
C
OUT
V
V
Voltage on any pin relative to V
DD
DD
Operating case temperature
supply voltage relative to V
supply voltage relative to V
Notes:
Storage temperature
Parameter
Stresses greater than those listed in Table 6 may cause permanent damage to the de-
vice. This is a stress rating only, and functional operation of the device at these or any
other conditions outside those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods
may adversely affect reliability.
1. V
2. MAX operating case temperature. T
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum T
greater than 0.6 × V
ing operation.
DD
and V
DDQ
SSQ
must be within 300mV of each other at all times, and V
SS
SS
DDQ
. When V
30
Min
–0.4
–0.4
–0.4
–55
0
DD
and V
C
Micron Technology, Inc. reserves the right to change products or specifications without notice.
is measured in the center of the package.
DDQ
1.975
1.975
1.975
Max
1Gb: x4, x8, x16 DDR3 SDRAM
150
95
are less than 500mV, V
Electrical Specifications
Units
© 2006 Micron Technology, Inc. All rights reserved.
°C
°C
V
V
V
REF
REF
may be ≤300mV.
must not be
Notes
2, 3
1
C
dur-
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