MT41J64M16LA-15E:B TR Micron Technology Inc, MT41J64M16LA-15E:B TR Datasheet - Page 31
![IC DDR3 SDRAM 1GBIT 96FBGA](/photos/7/23/72317/mfg557-60-fbga_sml.jpg)
MT41J64M16LA-15E:B TR
Manufacturer Part Number
MT41J64M16LA-15E:B TR
Description
IC DDR3 SDRAM 1GBIT 96FBGA
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Specifications of MT41J64M16LA-15E:B TR
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
1G (64M x 16)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
96-FBGA
Organization
64Mx16
Density
1Gb
Address Bus
16b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
355mA
Pin Count
96
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Input/Output Capacitance
Table 7: Input/Output Capacitance
Note 1 applies to the entire table
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
Capacitance
Parameters
CK and CK#
ΔC: CK to CK#
Single-end I/O: DQ, DM
Differential I/O: DQS,
DQS#, TDQS, TDQS#
ΔC: DQS to DQS#, TDQS,
TDQS#
ΔC: DQ to DQS
Inputs (CTRL, CMD,
ADDR)
ΔC: CTRL to CK
ΔC: CMD_ADDR to CK
ZQ pin capacitance
Reset pin capacitance
Notes:
C
DI_CMD_ADDR
Symbol
C
C
1. V
2. DM input is grouped with I/O pins, reflecting the fact that they are matched in loading.
3. Includes TDQS, TDQS#. Cddqs is for DQS vs. DQS# and TDQS vs. TDQS# separately.
4. C
5. Excludes CK, CK#; CTRL = ODT, CS#, and CKE; CMD = RAS#, CAS#, and WE#; ADDR = A[n:
6. C
7. C
DI_CTRL
C
C
C
C
C
C
DDQS
C
DCK
C
DIO
ZO
CK
RE
IO
IO
I
V
0], BA[2:0].
DIO
DI_CTRL
DI_CMD_ADDR
DD
DDQ
= +1.5V ±0.075mV, V
= C
, V
OUT
IO
= C
Min Max Min Max Min Max Min Max Min Max
0.75
DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866
–0.5
–0.5
–0.5
0.8
1.5
1.5
0
0
–
–
(DQ) - 0.5 × (C
I
(peak-to-peak) = 0.1V.
(CTRL) - 0.5 × (C
= C
0.15
1.6
3.0
3.0
0.2
0.3
1.4
0.3
0.5
3.0
3.0
I
(CMD_ADDR) - 0.5 × (C
0.75
–0.5
–0.5
–0.5
0.8
1.5
1.5
0
0
–
–
IO
DDQ
31
[DQS] + C
CK
0.15
1.35
1.6
3.0
3.0
0.2
0.3
0.3
0.5
3.0
3.0
= V
[CK] + C
DD
0.75
–0.5
–0.4
–0.4
, V
0.8
1.5
1.5
IO
Micron Technology, Inc. reserves the right to change products or specifications without notice.
0
0
–
–
REF
[DQS#]).
CK
CK
= V
[CK#]).
0.15
0.15
1.4
2.5
2.5
0.3
1.3
0.2
0.4
3.0
3.0
[CK] + C
SS
1Gb: x4, x8, x16 DDR3 SDRAM
, f = 100 MHz, T
0.75
–0.5
–0.4
–0.4
0.8
1.5
1.5
0
0
–
–
CK
[CK#]).
Electrical Specifications
0.15
0.15
1.4
2.3
2.3
0.3
1.3
0.2
0.4
3.0
3.0
© 2006 Micron Technology, Inc. All rights reserved.
0.75
–0.5
–0.4
–0.5
C
0.8
1.4
1.4
0
0
–
–
= 25°C. V
0.15
0.15
1.3
2.2
2.2
0.3
1.3
0.2
0.3
3.0
3.0
OUT(DC)
Units Notes
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
= 0.5 ×
2
3
3
4
5
6
7
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