CY7C1263V18-375BZXC Cypress Semiconductor Corp, CY7C1263V18-375BZXC Datasheet - Page 16

• Manufacturer Part Number: CY7C1263V18-375BZXC
• Description: IC SRAM 36MBIT 375MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1263V18-375BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 36M (4M x 8)
• Speed: 375MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TAP Controller Block Diagram
TAP Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-06366 Rev. *E
V
V
V
V
V
V
I
12. These characteristics apply to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in
13. Overshoot: V
14. All voltage refer to Ground.
X
OH1
OH2
OL1
OL2
IH
IL
TDI
Parameter
TCK
TMS
IH
(AC) < V
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input and Output Load Current
Selection
Circuitry
DDQ
+ 0.3V (pulse width less than t
[12, 13, 14]
Description
108
31
Boundary Scan Register
30
.
Identification Register
CYC
Instruction Register
/2). Undershoot: V
29
.
TAP Controller
.
.
.
.
I
I
I
I
GND ≤ V
IL
OH
OH
OL
OL
(AC) >
Bypass Register
2
2
2
= 2.0 mA
= 100 μA
= −2.0 mA
= −100 μA
Test Conditions
−
0.3V (pulse width less than t
1
1
1
I
≤ V
0
0
0
0
DD
CY7C1261V18, CY7C1276V18
CY7C1263V18, CY7C1265V18
Electrical Characteristics on page
0.65V
–0.3
CYC
Selection
Circuitry
Min
1.4
1.6
–5
/2).
DD
V
0.35V
DD
Max
0.4
0.2
5
+ 0.3
DD
22.
Page 16 of 29
TDO
Unit
μA
V
V
V
V
V
V
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