CY7C1263V18-375BZXC Cypress Semiconductor Corp, CY7C1263V18-375BZXC Datasheet - Page 8

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CY7C1263V18-375BZXC

Manufacturer Part Number
CY7C1263V18-375BZXC
Description
IC SRAM 36MBIT 375MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1263V18-375BZXC

Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
36M (4M x 8)
Speed
375MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1263V18-375BZXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Functional Overview
The CY7C1261V18, CY7C1276V18, CY7C1263V18, and
CY7C1265V18 are synchronous pipelined Burst SRAMs
equipped with a read port and a write port. The read port is
dedicated to read operations and the write port is dedicated to
write operations. Data flows into the SRAM through the write port
and out through the read port. These devices multiplex the
address inputs to minimize the number of address pins required.
By having separate read and write ports, the QDR-II+ completely
eliminates the need to “turn around” the data bus and avoids any
possible data contention, thereby simplifying system design.
Each access consists of four 8-bit data transfers in the case of
CY7C1261V18, four 9-bit data transfers in the case of
CY7C1276V18, four 18-bit data transfers in the case of
CY7C1263V18, and four 36-bit data transfers in the case of
CY7C1265V18, in two clock cycles.
Accesses for both ports are initiated on the Positive Input Clock
(K). All synchronous input and output timing refer to the rising
edge of the Input clocks (K/K).
All synchronous data inputs (D
registers controlled by the input clocks (K and K). All
synchronous data outputs (Q
registers controlled by the rising edge of the Input clocks (K and
K).
All synchronous control (RPS, WPS, BWS
through input registers controlled by the rising edge of the input
clocks (K/K).
CY7C1263V18 is described in the following sections. The same
basic descriptions apply to CY7C1261V18, CY7C1276V18, and
CY7C1265V18.
Read Operations
The CY7C1263V18 is organized internally as 4 arrays of 512K x
18. Accesses are completed in a burst of four sequential 18-bit
data words. Read operations are initiated by asserting RPS
active at the rising edge of the Positive Input Clock (K). The
addresses presented to address inputs are stored in the Read
address register. Following the next two K clock rising edges, the
corresponding lowest order 18-bit word of data is driven onto the
Q
quent rising edge of K the next 18-bit data word is driven onto
the Q
have been driven out onto Q
0.45 ns from the rising edge of the Input clock (K or K). To
maintain the internal logic, each read access must be allowed to
complete. Each read access consists of four 18-bit data words
and takes two clock cycles to complete. Therefore, read
accesses to the device cannot be initiated on two consecutive K
clock rises. The internal logic of the device ignores the second
read request. Read accesses can be initiated on every other K
clock rise. Doing so pipelines the data flow such that data is
transferred out of the device on every rising edge of the input
clocks (K and K).
When the read port is deselected, the CY7C1263V18=
completes the pending read transactions. Synchronous internal
circuitry automatically tri-states the outputs following the next
rising edge of the negative Input Clock (K). This enables a
seamless transition between devices without the insertion of wait
states in a depth expanded memory.
Document Number: 001-06366 Rev. *E
[17:0]
[17:0]
using K as the output timing reference. On the subse-
. This process continues until all four 18-bit data words
[17:0]
[x:0]
[x:0]
) outputs pass through output
. The requested data is valid
) inputs pass through input
[x:0]
) inputs pass
Write Operations
Write operations are initiated by asserting WPS active at the
rising edge of the Positive Input Clock (K). On the following K
clock rise, the data presented to D
the lower 18-bit Write Data register, provided BWS
asserted active. On the subsequent rising edge of the Negative
Input Clock (K), the information presented to D
into the Write Data register, provided BWS
active. This process continues for one more cycle until four 18-bit
words (a total of 72 bits) of data are stored in the SRAM. The 72
bits of data are then written into the memory array at the specified
location. Therefore, write accesses to the device cannot be
initiated on two consecutive K clock rises. The internal logic of
the device ignores the second write request. Write accesses can
be initiated on every other rising edge of the Positive Input Clock
(K). Doing so pipelines the data flow such that 18 bits of data can
be transferred into the device on every rising edge of the input
clocks (K and K). When deselected, the write port ignores all
inputs after the pending write operations have been completed.
Byte Write Operations
Byte write operations are supported by the CY7C1263V18. A
write operation is initiated as described in the
section. The bytes that are written are determined by BWS
BWS
Asserting the appropriate Byte Write Select input during the data
portion of a write latches the data being presented and written
into the device. Deasserting the Byte Write Select input during
the data portion of a write enables the data stored in the device
for that byte to remain unaltered. This feature can be used to
simplify read/modify/write operations to a byte write operation.
Concurrent Transactions
The read and write ports on the CY7C1263V18 operate
completely independently of one another. Because each port
latches the address inputs on different clock edges, the user can
read or write to any location, regardless of the transaction on the
other port. If the ports access the same location when a read
follows a write in successive clock cycles, the SRAM delivers the
most recent information associated with the specified address
location. This includes forwarding data from a write cycle that
was initiated on the previous K clock rise.
Read accesses and write access must be scheduled such that
one transaction is initiated on any clock cycle. If both ports are
selected on the same K clock rise, the arbitration depends on the
previous state of the SRAM. If both ports are deselected, the
read port takes priority. If a read was initiated on the previous
cycle, the Write port assumes priority (because read operations
cannot be initiated on consecutive cycles). If a write was initiated
on the previous cycle, the read port assumes priority (because
write operations cannot be initiated on consecutive cycles).
Therefore, asserting both port selects active from a deselected
state results in alternating read/write operations being initiated,
with the first access being a read.
1
, which are sampled with each set of 18-bit data words.
CY7C1261V18, CY7C1276V18
CY7C1263V18, CY7C1265V18
[17:0]
is latched and stored into
[1:0]
[17:0]
are both asserted
Write Operations
is also stored
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[1:0]
are both
0
and
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