CY7C1263V18-375BZXC Cypress Semiconductor Corp, CY7C1263V18-375BZXC Datasheet - Page 29

• Manufacturer Part Number: CY7C1263V18-375BZXC
• Description: IC SRAM 36MBIT 375MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1263V18-375BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 36M (4M x 8)
• Speed: 375MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document History Page
© Cypress Semiconductor Corporation, 2006-2008. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 001-06366 Rev. *E
QDR™ is a trademark of Cypress Semiconductor Corp. QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All
product and company names mentioned in this document are the trademarks of their respective holders.
Document Title: CY7C1261V18/CY7C1276V18/CY7C1263V18/CY7C1265V18, 36-Mbit QDR™-II+ SRAM 4-Word Burst Ar-
chitecture (2.5 Cycle Read Latency)
Document Number: 001-06366
REV.
*A
*B
*C
*D
*E
**
ECN NO.
1072841
2198506
2560835
425689
461639
497628
SUBMISSION
See ECN
See ECN
See ECN
See ECN
See ECN
09/02/08
DATE
VKN/KKVTMP Converted from preliminary to final
VKN/PYRS
VKN/AESA
ORIG. OF
CHANGE
NXR
NXR
NXR
New Data Sheet
Revised the MPNs from
CY7C1256AV18 to CY7C1276V18
CY7C1263AV18 to CY7C1263V18
CY7C1265AV18 to CY7C1265V18
Changed t
t
ns in TAP AC Switching Characteristics table
Modified Power-Up waveform
Changed the V
section, in Operating Range table and in the DC Electrical Characteristics
table
Added foot note in page# 1
Changed the Maximum rating of Ambient Temperature with Power
Applied from –10°C to +85°C to –55°C to +125°C
Changed V
Characteristics table and in the note below the table
Updated note# 20 to specify Overshoot and Undershoot Spec
Updated Θ
Removed x9 part and its related information
Updated footnote #25
Added x8 and x9 parts
Changed I
1240 mA for 375 MHz, 850 mA to 1120 mA for 333 MHz, 800 mA to 1040
mA for 300 MHz
Changed I
mA for 375 MHz, 275 mA to 300 mA for 333 MHz, 250 mA to 280 mA for
300 MHz
Changed t
Changed Θ
Updated Ordering Information table
Added footnote# 21 related to I
Corrected typo in the “Configurations” section on page# 1
TMSH
Revised September 01, 2008
, t
TDIH
DD
SB
TH
CYC
JA
REF
JA
, t
values from 325 mA to 320 mA for 400 MHz, 300 mA to 310
and t
and Θ
values from 1050 mA to 1330 mA for 400 MHz, 950 mA to
CH
value from 12.43 °C/W to 16.25 °C/W
max spec to 8.4 ns for all speed bins
DDQ
(Max.) spec from 0.85V to 0.95V in the DC Electrical
from 10 ns to 5 ns and changed t
TL
JC
operating voltage to 1.4V to V
DESCRIPTION OF CHANGE
from 40 ns to 20 ns, changed t
values
CY7C1261V18, CY7C1276V18
CY7C1263V18, CY7C1265V18
DD
TDOV
DD
TMSS
in the Features
from 20 ns to 10
, t
TDIS
Page 29 of 29
, t
CS
,
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