CY7C1263V18-375BZXC Cypress Semiconductor Corp, CY7C1263V18-375BZXC Datasheet - Page 22

• Manufacturer Part Number: CY7C1263V18-375BZXC
• Description: IC SRAM 36MBIT 375MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1263V18-375BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 36M (4M x 8)
• Speed: 375MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with Power Applied. –55°C to + 125°C
Supply Voltage on V
Supply Voltage on V
DC Applied to Outputs in High-Z ........ –0.5V to V
DC Input Voltage
Electrical Characteristics
Over the Operating Range
DC Electrical Characteristics
AC Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-06366 Rev. *E
V
V
V
V
V
V
V
V
I
I
V
I
I
V
V
17. Power up: assumes a linear ramp from 0V to V
18. Outputs are impedance controlled. I
19. Outputs are impedance controlled. I
20. V
21. The operation current is calculated with 50% read cycle and 50% write cycle.
X
OZ
DD
SB1
Parameter
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
IH
IL
[21]
REF
(min) = 0.68V or 0.46V
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
Automatic
Power Down
Current
Input HIGH Voltage
Input LOW Voltage
DD
[13]
Operating Supply
............................... –0.5V to V
DD
DDQ
Description
Description
Relative to GND .......–0.5V to + 2.9V
Relative to GND ..... –0.5V to + V
DDQ
[14]
[13]
, whichever is larger, V
OH
OL
= (V
=
−
(V
DDQ
[20]
DDQ
DD
/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ωs.
/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ωs.
(min) within 200 ms. During this time V
Note 18
GND ≤ V
GND ≤ V
Typical Value = 0.75V
V
f = f
Max. V
Deselected, V
V
f = f
Inputs Static
Note 19
I
I
OH
OL
DD
IN
REF
= 0.1 mA, Nominal Impedance
= −0.1 mA, Nominal Impedance
MAX
MAX
≤ V
= Max., I
DDQ
(max) = 0.95V or 0.54V
DD
DD
IL
= 1/t
= 1/t
I
I
, Both Ports
≤ V
≤ V
+ 0.3V
+ 0.3V
Test Conditions
Test Conditions
CYC
CYC
OUT
DDQ
DDQ,
IN
DD
≥ V
,
= 0mA,
Output Disabled
IH
or
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage (MIL-STD-883, M. 3015)... >2001V
Latch Up Current .................................................... >200 mA
Operating Range
DDQ
Com’l
Ind’l
Range
300 MHz
333 MHz
375 MHz
400 MHz
300 MHz
333 MHz
375 MHz
400 MHz
, whichever is smaller.
IH
< V
DD
and V
Temperature (T
–40°C to +85°C
0°C to +70°C
CY7C1261V18, CY7C1276V18
CY7C1263V18, CY7C1265V18
V
V
DDQ
DDQ
DDQ
V
Ambient
V
V
DDQ
REF
REF
–0.15
–0.24
< V
0.68
Min
V
Min
1.7
1.4
/2 – 0.12
/2 – 0.12
−2
−2
SS
+ 0.1
+ 0.2
DD.
– 0.2
A
)
0.75
Typ.
Typ
1.8
1.5
–
–
1.8 ± 0.1V
V
DD
V
V
V
V
DDQ
DDQ
V
V
DDQ
[17]
DDQ
REF
REF
V
1040
1240
1330
1120
Max
0.95
Max
V
280
300
310
320
/2 + 0.12
/2 + 0.12
1.9
0.2
DDQ
DD
2
2
+ 0.15
+ 0.24
– 0.1
– 0.2
1.4V to V
Page 22 of 29
V
DDQ
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
μA
μA
V
V
V
V
V
V
V
V
V
V
V
[17]
DD
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