MD4832-D512-V3Q18-X-P/Y SanDisk, MD4832-D512-V3Q18-X-P/Y Datasheet - Page 80

• Manufacturer Part Number: MD4832-D512-V3Q18-X-P/Y
• Description: IC MDOC G3 512MB 85-FBGA
• Manufacturer: SanDisk

Specifications of MD4832-D512-V3Q18-X-P/Y

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 585-1139

10.
10.1 Environmental Specifications
10.1.1 Operating Temperature
Commercial temperature range:
Extended temperature range: -40°C to +85°C
10.1.2 Thermal Characteristics
10.1.3 Humidity
10% to 90% relative, non-condensing
10.1.4 Endurance
Mobile DiskOnChip G3 is based on NAND MLC flash technology, which guarantees a minimum of
100,000 erase cycles. Due to the TrueFFS wear-leveling algorithm, the life span of all DiskOnChip
products is significantly prolonged. M-Systems’ website (www.m-sys.com) provides an online life-
span calculator to facilitate application-specific endurance calculations.
10.2 Electrical Specifications
10.2.1 Absolute Maximum Ratings
77
VCC
VCCQ
T
I
V
T
ESD: Charged Device Model
ESD: Human Body Model
IN
1SUPPLY
STG
IN
2
1.
2.
3.
P
Permanent device damage may occur if absolute maximum ratings are exceeded. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
The voltage on any ball may undershoot to -2.0 V or overshoot to 6.6V for less than 20 ns.
When operating Mobile DiskOnChip G3 with separate power supplies for VCC and VCCQ, it is recommended to turn both supplies on
and off simultaneously. Providing power separately (either at power-on or power-off) can cause excessive power dissipation. Damage to
the device may result if this condition persists for more than 1 second.
RODUCT
Symbol
S
PECIFICATIONS
Junction to Case (θ
DC core supply voltage
DC I/O supply voltage
Maximum duration of applying
VCCQ without VCC, or VCC
without VCCQ
Input pin/ball current (25 °C)
Input pin/ball voltage
Storage temperature
ESD
ESD
Table 10: Absolute Maximum Ratings
CDM
HBM
Table 9: Thermal Characteristics
Preliminary Data Sheet, Rev. 1.1
Thermal Resistance (°C/W)
0°C to +70°C
JC
Parameter
): 30
Junction to Ambient (θ
-0.6 to VCCQ+0.3V, 4.6V max
JA
): 85
-0.6 to 4.6
-0.6 to 4.6
-55 to 150
-10 to 10
Rating1
1000
1000
2000
Mobile DiskOnChip G3
91-SR-011-05-8L
Unit
mse
mA
°C
V
V
V
V
V
c