BTS50080-1TEB Infineon Technologies, BTS50080-1TEB Datasheet
BTS50080-1TEB
Specifications of BTS50080-1TEB
BTS50080-1TEBTR
SP000411784
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BTS50080-1TEB Summary of contents
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... Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Block Diagram and Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3.1 Pin Assignment BTS50080-1TEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.2 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 ...
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... The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip technology. The BTS50080-1TEB has a current controlled input and offers a diagnostic feedback with load current sense and a defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown. ...
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... V grounded loads • All types of resistive, inductive and capacitive loads • Most suitable for loads with high inrush currents lamps • Replaces electromechanical relays, fuses and discrete circuits Datasheet Smart High-Side Power Switch 4 BTS50080-1TEB Overview Rev. 1.0, 2008-08-28 ...
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... V I bIS VBB IN BTS50080-1TEB OUT Smart High-Side Power Switch BTS50080-1TEB Block Diagram and Terms base chip clamp for inductive load current limitation V ON, V OFF OUT Rev. 1.0, 2008-08- OUT I L Overview .emf ...
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... Pin Configuration 3.1 Pin Assignment BTS50080-1TEB Figure 3 Pin Configuration 3.2 Pin Definitions and Functions Pin Symbol Function 1 OUT Output; output to the load; pin 1 and 5 must be externally shorted Input; activates the power switch if shorted to ground Supply Voltage; positive power supply voltage; tab and pin 3 are internally shorted. ...
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... Min bb(SC) V bb(LD) V bIN bIS bIN stg V ESD is the internal resistance of the Load Dump pulse generator Smart High-Side Power Switch BTS50080-1TEB General Product Characteristics Limit Values Unit Conditions Max. - – – R – Ω 1.5 Ω – -140 15 mA – - – -140 ...
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... Cu 35µm Cu). Where applicable a thermal via array under the exposed pad contacted the first inner copper layer. Datasheet Symbol Limit Values Min. R – thJC R thJA - - Smart High-Side Power Switch BTS50080-1TEB General Product Characteristics Unit Conditions Typ. Max. - 1.1 K/W – K/W – ...
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... The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge pump. 5.1 Input Circuit Figure 4 shows the input circuit of the BTS50080-1TEB. The current source to V switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses. V bIN ...
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... M drops below ground potential due to the involved OUT ≅ VBB V ). See Figure 7 and Figure 8 ON(CL) 10 Smart High-Side Power Switch BTS50080-1TEB Power Stages , / OUT OUT for details. The maximum allowed load Rev. 1.0, 2008-08-28 W\S $ ...
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... V OUT(CL Figure 8 Switching an Inductance 5.3.1 Maximum Load Inductance While de-energizing inductive loads, energy has to be dissipated in the BTS50080-1TEB. This energy can be calculated via the following equation the event of de-energizing very low ohmic inductances ( R The energy, which is converted into heat, is limited by the thermal design of the component. For given starting currents the maximum allowed inductance is therefore limited ...
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... Maximum load inductance for single pulse, 5.4 Inverse load current capability The BTS50080-1TEB can be operated under inverse load current condition ( device can not block the current flow during inverse mode condition a voltage drop across the activated channel OFF condition a voltage drop across the intrinsic body diode long as the inverse current does not exceed |- mode ...
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... Min. V 5.5 bb(on bIN( bb(ucp bb(OFF IN(on IN(off) R DS(ON L(nom ON(CL) R ON(inv L(inv OFF(inv Smart High-Side Power Switch BTS50080-1TEB Power Stages Unit Conditions Typ. Max 2.5 3 ° 5.5 V – 1.4 2.2 mA – I µ 1.4 2.2 mA ≥ bIN - 30 µA – V mΩ ...
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... OFF d(inv 0 -( 0.3 OFF Chapter 4.1 2 copper heatsinking area (one layer, 70 µ and DS(ON) th can be provided by the pin IS until standard forward IS(fault) 14 BTS50080-1TEB Power Stages ° Unit Conditions R = 2.2 Ω 500 µ 2.2 Ω 500 µ > OUT IN(inv) IN(fwd 2.2 Ω ...
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... V exceeds the short circuit detection threshold ON t expired after switch on. d(SC1 not activated or that the on chip temperature sensor ON(SC) t expired, the device switches off resulting from d(SC1) 15 Smart High-Side Power Switch BTS50080-1TEB Protection Functions Figure 11 shows the dependency for ...
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... V_ON_detect .emf outlines allowable combinations for a single short circuit event µH 12 7,5 5 2,5 0 short_circuit . emf 16 Smart High-Side Power Switch BTS50080-1TEB Protection Functions Overtemperature detection thermal hysteresis Over_Temp.emf V = 16V 18V 24V 100 150 200 mΩ Rev. 1.0, 2008-08- 30V 250 R SC ...
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... P diss(rev) R ON(rev < the pin IN or the pin IS should be low ohmic connected to signal bb R should not be above 80 mA 0.08A -------- - ------- - ------------------------------- + = Smart High-Side Power Switch BTS50080-1TEB Protection Functions Figure 14 for details power ground 2 ⋅ Rbb additional resistor bb 12V – Rev. 1.0, 2008-08-28 Reverse.emf ...
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... Beside the output clamp for the power stage as described in implemented for all logic pins. See IN Figure 15 Overvoltage Protection 6.5 Loss of Ground Protection In case of complete loss of the device ground connections the BTS50080-1TEB securely changes to or remains in off state. 6.6 Loss of V Protection bb In case of complete loss of V the BTS50080-1TEB remains in off state ...
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... I L18(SC L24(SC L30(SC 2.5 ON(SC) t 350 d(SC1 150 j(SC) T ∆ ON(rev line - Z, Z,IS 19 Smart High-Side Power Switch BTS50080-1TEB Protection Functions Unit Conditions Typ. Max 1 180 220 (Tab to pin 1 and 5) 125 - 110 = 170 µ (Tab to pin 1 and (Tab to pin 1 and 170 µs, ...
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... Short circuit current limit for max. duration of 3) min. value valid only if input “off-signal” time exceeds 30 µs Datasheet Smart High-Side Power Switch t , prior to shutdown, see also Figure d(SC1) 20 BTS50080-1TEB Protection Functions 12. Rev. 1.0, 2008-08-28 ...
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... Diagnosis For diagnosis purpose, the BTS50080-1TEB provides an enhanced sense signal at the pin IS. The pin IS provides during normal operation a sense current, which is proportional to the load current as long as V > The ratio of the output current is defined as bIS the forward voltage drops below The pin IS provides in case of any fault conditions a defined fault current ...
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... ILIS I , the forward voltage drop >1V typ IS(fault IS(LL Smart High-Side Power Switch BTS50080-1TEB PD[ W\S PLQ and the load current The ripple ON(NL) short over-temperature V >V V <1V typ. ON ON(SC Lx(SC IS(fault) IS(fault) t delay(fault) Rev. 1.0, 2008-08-28 ...
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... Limit Values Min. Typ ILIS 8.3 7.5 6.1 disabled 1) I 4.0 IS(lim) I 4.0 IS(fault) I – IS(LL) I – IS(LH) t – son(IS) t – slc(IS) t 350 delay(fault) 23 Smart High-Side Power Switch BTS50080-1TEB Unit Conditions Max < IS(lim) 9.7 11 9.7 11.4 9.7 14 7.5 mA < typ 5.2 7 ...
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... Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Packages”: http://www.infineon.com/packages. Datasheet Smart High-Side Power Switch 24 BTS50080-1TEB Package Outlines Dimensions in mm Rev. 1.0, 2008-08-28 ...
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... Revision History Version Date Changes Data sheet 2008-08-22 Initial version of data sheet. Rev. 1.0 Datasheet Smart High-Side Power Switch 25 BTS50080-1TEB Revision History Rev. 1.0, 2008-08-28 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...
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... Published by Infineon Technologies AG ...