BTS50080-1TEB Infineon Technologies, BTS50080-1TEB Datasheet - Page 11
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BTS50080-1TEB
Manufacturer Part Number
BTS50080-1TEB
Description
IC SWITCH PWR HISIDE TO252-5
Manufacturer
Infineon Technologies
Series
PROFET®r
Type
High Sider
Datasheet
1.BTS50080-1TEB.pdf
(27 pages)
Specifications of BTS50080-1TEB
Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
8 mOhm
Current - Output / Channel
10A
Current - Peak Output
70A
Voltage - Supply
5.5 V ~ 30 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (4 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BTS50080-1TEB
BTS50080-1TEBTR
SP000411784
BTS50080-1TEBTR
SP000411784
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BTS50080-1TEB
Manufacturer:
INFINEON
Quantity:
12 500
Figure 8
5.3.1
While de-energizing inductive loads, energy has to be dissipated in the BTS50080-1TEB. This energy can be
calculated via the following equation:
In the event of de-energizing very low ohmic inductances ( R
The energy, which is converted into heat, is limited by the thermal design of the component. For given starting
currents the maximum allowed inductance is therefore limited. See
at
Datasheet
V
bb
=12V.
Switching an Inductance
Maximum Load Inductance
V
OUT(CL)
V
OUT
V
bb
I
E
L
=
V
ON CL
(
)
⋅
V
------------------------------------ ln
bb
E
–
ON
V
=
V
R
ON(CL)
L
ON CL
1
-- -
2
LI
(
L
2
)
⋅
⋅
11
---------------------------------- -
V
ON(CL)
V
1
L
ON(CL)
≈
+
0) the following, simplified equation can be used:
---------------------------------- -
V
–
ON(CL)
Figure 9
V
R
bb
OFF
L
⋅
Smart High-Side Power Switch
I
L
–
for the maximum allowed inductance
V
bb
+
t
t
I
L
⋅
----- -
R
L
Rev. 1.0, 2008-08-28
L
BTS50080-1TEB
InductiveLoad.emf
Power Stages