BTS50055-1TMC Infineon Technologies, BTS50055-1TMC Datasheet - Page 7
BTS50055-1TMC
Manufacturer Part Number
BTS50055-1TMC
Description
IC SWITCH PWR HISIDE TO220-7
Manufacturer
Infineon Technologies
Series
PROFET®r
Type
High Sider
Datasheet
1.BTS50055-1TMC.pdf
(17 pages)
Specifications of BTS50055-1TMC
Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
4.4 mOhm
Current - Output / Channel
70A
Current - Peak Output
130A
Voltage - Supply
5 V ~ 34 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
TO-220-7 (Bent and Staggered Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000385908
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTS50055-1TMC
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Terms
V
Two or more devices can easily be connected in
parallel to increase load current capability.
Input circuit (ESD protection)
When the device is switched off (I
between IN and GND reaches almost V
mechanical switch, a bipolar or MOS transistor with
appropriate breakdown voltage as driver.
V
bb
Z,IN
V bIN
= 66 V (typ).
V
IN
V IN
V
V
bIN
IN
Z,IN
R
I
I
IN
IN
IN
V
V
ZD
3
IS
bIS
IN
4
5
PROFET
V
IS
bb
I bb
D
R
I
IS
S
IS
IN
= 0) the voltage
OUT
bb
R bb
. Use a
1,2,6,7
I L
Page 7 of 17
V bb
V
V
OUT
ON
Current sense status output
V
devices are connected in parallel). I
driven only by the internal circuit as long as V
5 V. If you want measure load currents up to I
should be less than
Note: For large values of R
almost V
If you don't use the current sense output in your
application, you can leave it open.
Inductive and overvoltage output clamp
V
switch-off without D
-19 V typ. via V
V
the inductive load, but higher peak power dissipation in
the PROFET. In case of a floating ground with a
potential higher than 19V referring to the OUT –
potential the device will switch on, if diode DS is not
used.
Z,IS
ON
ON(CL)
is clamped to V
= 66 V (typ.), R
via V
V
bb
bb
. See also overvoltage protection.
Z1
Data Sheet BTS50055-1TMC
ZG
. Using D
R
. With D
bb
V
S
ZG
D
IS
I
ON(Cl)
V
I
L(M)
, V
S
IS
V
bb
Z1
= 1 kΩ nominal (or 1 kΩ /n, if n
ZD
OUT
S
- 5 V
/ K
IS
S
gives faster deenergizing of
= 42 V typ. At inductive load
, V
IS
ilis
is clamped to V
OUT
the voltage V
.
V
PROFET
Z,IS
is clamped to V
IS
S
= I
R
IS
L
/k
+ V
2010-April-27
OUT
ilis
IS
OUT(CL)
V
V
ON
bb
OUT
can reach
can be
out
L(M)
V
IS
- V
bb
, R
=
IS
-
IS
>