BTS50055-1TMB Infineon Technologies, BTS50055-1TMB Datasheet - Page 8

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BTS50055-1TMB

Manufacturer Part Number
BTS50055-1TMB
Description
IC PWR SWITCH 170W TO-220-7-11
Manufacturer
Infineon Technologies
Series
PROFET®r
Type
High Sider
Datasheet

Specifications of BTS50055-1TMB

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
4.4 mOhm
Current - Output / Channel
70A
Current - Peak Output
130A
Voltage - Supply
5 V ~ 34 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Through Hole
Package / Case
TO-220-11 (Bent and Staggered Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BTS500551TMBXK
Q4432267
SP000385907

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTS50055-1TMB
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BTS50055-1TMB
0
Input circuit (ESD protection)
Short circuit detection
Fault Condition: V
(80 ...350 µs).
Infineon Technologies AG
When the device is switched off (I
between IN and GND reaches almost V
mechanical switch, a bipolar or MOS transistor with
appropriate breakdown voltage as driver.
V
Z,IN
V bIN
= 66 V (typ).
Logic
unit
V IN
V
IN
Z,IN
I
IN
ON
Short circuit
> V
detection
ZD
ON(SC)
(6 V typ.) and t> t
IN
= 0) the voltage
bb
R bb
OUT
. Use a
+ V bb
V
ON
d(SC)
V bb
Page 8
Current sense status output
V
devices are connected in parallel). I
driven only by the internal circuit as long as V
5 V. If you want measure load currents up to I
should be less than
Note: For large values of R
almost V
If you don't use the current sense output in your
application, you can leave it open.
Inductive and over voltage output clamp
V
switch-off without D
-19 V typ. via V
V
the inductive load, but higher peak power dissipation in
the PROFET. In case of a floating ground with a
potential higher than 19V referring to the OUT –
potential the device will switch on, if diode DS is not
used.
Z,IS
ON
ON(CL)
is clamped to V
= 66 V (typ.), R
via V
V
bb
bb
. See also over voltage protection.
Z1
Data Sheet BTS50055-1TMB
ZG
. Using D
R
. With D
bb
V
S
ZG
D
IS
I
ON(Cl)
V
I
L(M)
, V
S
IS
V
bb
Z1
= 1 kΩ nominal (or 1 kΩ /n, if n
ZD
OUT
S
- 5 V
/ K
IS
S
gives faster deenergizing of
= 42 V typ. At inductive load
, V
IS
ilis
is clamped to V
OUT
the voltage V
.
V
PROFET
Z,IS
is clamped to V
IS
S
= I
R
2010-April-27
IS
L
/k
+ V
OUT
ilis
IS
OUT(CL)
V
V
ON
bb
OUT
can reach
can be
out
L(M)
V
IS
- V
bb
, R
=
IS
-
IS
>

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