BUK116-50L,118 NXP Semiconductors, BUK116-50L,118 Datasheet - Page 10

• Manufacturer Part Number: BUK116-50L,118
• Description: TOPFET LOGIC LVL 50V D2PAK
• Manufacturer: NXP Semiconductors
• Series: TOPFET™r
• Type: Low Sider

Specifications of BUK116-50L,118

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 22 mOhm
• Current - Output / Channel: 50A
• Current - Peak Output: 200A
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Other names: 934044320118; BUK116-50L /T3; BUK116-50L /T3

Philips Semiconductors
July 1996
Logic level TOPFET
SMD version of BUK106-50L/S
Fig.23. Typical DC protection supply characteristics.
Fig.24. Typical latched input characteristics, 25 ˚C.
I
1.0
0.5
PS
0
150
100
50
= f(V
V
0
0
I
IPS / mA
ISL
IS(TO)
2
1
0
0
IISL / mA
-60
= f(V
VIS(TO) / V
PS
= f(T
Fig.22. Input threshold voltage.
); normal or overload operation; T
-40
2
IS
); after overload protection latched
2
-20
j
); conditions: I
4
0
VPS / V = 11
20
4
6
max.
min.
VPS / V
typ.
40
VIS / V
Tj / C
D
60
6
8
= 1 mA; V
80
100 120 140
10
8
BUK116-50L/S
BUK116-50L/S
DS
= 5 V
12
j
= 25 ˚C
10
10
9
8
7
6
5
4
14
10
Fig.27. Clamping energy test circuit, R
Fig.25. Typical reverse diode current, T
120
110
100
200
150
100
90
80
70
60
50
40
30
20
10
50
0
VDS
ID
VIS
0
Fig.26. Normalised limiting clamping energy.
0
0
0
I
S
0
0
EDSM%
IS / A
= f(V
E
E
0.2
DSM
DSM
RI = RIS
20
SDS
% = f(T
0.4
); conditions: V
0.5 LI
RF
40
V(CL)DSR
VDD
0.6
mb
P
F
+
I
D
VPS
2
); conditions: I
0.8
60
V
P
CL DSR
VSD / V
Tmb / C
D
S
1
TOPFET
L
IS
80
D.U.T.
= 0 V; t
VDS
V
1.2
BUK116-50L/S
CL DSR
Product specification
100
1.4
D
shunt
R 01
= 27 A
p
= 250 s
+
BUK116-50L/S
-
V
1.6
120
IS
DD
j
= 100 .
= 25 ˚C.
Rev 1.000
-ID/100
VDD
1.8
140
2