TC58V64ADC-T051 Toshiba, TC58V64ADC-T051 Datasheet - Page 5

• Manufacturer Part Number: TC58V64ADC-T051
• Description: IC 64MBIT NAND SMART 3V 44TSOP
• Manufacturer: Toshiba

Specifications of TC58V64ADC-T051

• Memory Size: 8MB
• Memory Type: EEPROM - Smart Media
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TC58V64DC-CT0501; TC58V64DC-CT0501

Notes:
PROGRAMMING AND ERASING CHARACTERISTICS
(Ta = = = = 0°~55°C, V
(1)
(2)
RY
t
N
t
P/E
(1) Refer to Application Note 12 toward the end of this document.
(2) Refer to Application Note 15 toward the end of this document.
PROG
BERASE
/
SYMBOL
RE
CE
BY
(Refer to Application Note (7) toward the end of this document.)
Sequential Read is terminated when t
If the RE to CE delay is less than 30 ns,
CE High to Ready time depends on the pull-up resistor tied to the
Programming Time
Number of Programming Cycles on Same
Page
Block Erasing Time
Number of Program/Erase Cycles
525
CC
= = = = 3.3 V ± ± ± ± 0.3 V)
PARAMETER
526
CEH
527
is greater than or equal to 100 ns.
RY
/
BY
A
MIN




signal stays Ready.
Busy
t
CEH
≥ 100 ns
TYP.
200


3
RY
/
BY
A
2.5 x 10
: 0~30 ns → Busy signal is not output.
1000
MAX
10
*
4
pin.
5
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*: V
TC58V64ADC
UNIT
ms
µs
IH
or V
IL
NOTES
(1)
(2)