MT4VDDT3264HY-335F2 Micron Technology Inc, MT4VDDT3264HY-335F2 Datasheet - Page 12

• Manufacturer Part Number: MT4VDDT3264HY-335F2
• Description: MODULE DDR 256MB 200-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4VDDT3264HY-335F2

• Memory Type: DDR SDRAM
• Memory Size: 256MB
• Speed: 333MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 32Mx64
• Total Density: 256MByte
• Chip Density: 512Mb
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 780mA
• Number Of Elements: 4
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1231; MT4VDDT3264HY-335F2

Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14; notes appear on pages 17–20; 0°C
Table 11: AC Input Operating Conditions
Notes: 1–5, 14; notes appear on pages 17–20; 0°C
pdf: 09005aef80b56d1b, source: 09005aef8086ea0b
DDA4C16_32x64HG.fm - Rev. D 9/04 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT Any input
0V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQ pins are disabled; 0V
OUTPUT LEVELS
High Current (V
Low Current (V
OUTPUT LEVELS (Reduced drive option)
High Current (V
Low Current (V
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on V
Voltage on V
Relative to V
Relative to V
Relative to V
V
IN
V
DD
, Vref pin 0V
OUT
OUT
OUT
OUT
REF
DD
DD
SS
SS
SS
Q Supply
= V
= V
Supply
= 0.373V, maximum V
= 0.373V, maximum V
and Inputs
. . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
DD
DD
Q - 0.373V, minimum V
Q - 0.373V, minimum V
V
OUT
V
IN
1.35V
V
DD
Q)
REF
REF
, maximum V
, maximum V
REF
REF
Command/
Address, RAS#,
CAS#, WE#,
CKE, S#
CK, CK#
DM
DQ, DQS
, minimum V
, minimum V
SYMBOL
V
V
V
T
T
REF
IH
IL
A
A
(
(
AC
(
AC
AC
+70°C
+70°C; V
)
)
)
TT
TT
)
)
12
TT
TT
)
)
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
DD
128MB, 256MB (x64, SR) PC3200
SYMBOL
0.49
V
V
V
Voltage on I/O Pins
Operating Temperature,
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . 50mA
= V
V
REF
V
V
IH
IL
V
I
I
I
200-PIN DDR SDRAM SODIMM
DD
I
I
OH
OH
REF
OZ
OL
OL
DD
I
(
Relative to V
TT
(
MIN
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T
DC
DC
DD
+ 0.310
Q
A
–
)
)
V
Q = +2.6V ±0.1V
(ambient) . . . . . . . . . . . . . . . . . . . .. 0°C to +70°C
DD
0.49 V
Q
V
V
REF
REF
-16.8
MIN
16.8
-0.3
2.5
2.5
-8
-4
-2
-5
-9
+ 0.15
9
- 0.04
0.51
V
SS
REF
DD
MAX
. . . . . . . . . . . . -0.5V to V
Q 0.51
- 0.310
–
V
DD
V
V
V
REF
REF
Q
DD
MAX
2.7
2.7
+ 0.04
8
4
2
5
–
–
–
–
- 0.15
+ 0.3
V
DD
UNITS
Q
V
V
V
UNITS
mA
mA
mA
mA
µA
µA
©2004 Micron Technology, Inc.
V
V
V
V
V
V
12, 25, 36
12, 25, 36
NOTES
DD
32, 37, 40,
32, 37, 49
NOTES
6
33, 35
34, 35
Q +0.5V
6, 40
7, 40
49
25
25
47
47