MT9VDDF6472Y-335F1 Micron Technology Inc, MT9VDDF6472Y-335F1 Datasheet - Page 30

• Manufacturer Part Number: MT9VDDF6472Y-335F1
• Description: MODULE DDR SDRAM 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDF6472Y-335F1

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 167MHz
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.575A
• Number Of Elements: 9
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1293; MT9VDDF6472Y-335F1

Table 23: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
pdf: 09005aef80e119b2, source: 09005aef807d56a1
DDF9C32_64x72G.fm - Rev. B 9/04 EN
BYTE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
0
1
2
3
4
5
6
7
8
9
Number of SPD Bytes Used by Micron
Total Number of Bytes in SPD Device
Fundamental Memory Type
Number of Row Addresses on Assembly
Number of Column Addresses on Assembly
Number of Physical Banks on DIMM
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time,
(See note 1)
SDRAM Access From Clock,
(CAS Latency = 2.5)
Module Configuration Type
Refresh Rate/Type
SDRAM Device Width (Primary SDRAM)
Error-checking SDRAM Data Width
Minimum Clock Delay, Back-to-Back
Random Column Access
Burst Lengths Supported
Number of Banks on SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time,
SDRAM Access from CK,
CAS Latency = 2
SDRAM Cycle Time,
SDRAM Access from CK,
CAS Latency = 1.5
Minimum Row Precharge Time,
Minimum Row Active to Row Active,
Minimum RAS# to CAS# Delay,
Minimum RAS# Pulse Width,
(See note 2)
DESCRIPTION
t
t
t
CK (CAS Latency = 2.5)
CK, CAS Latency = 2
CK, CAS Latency = 1.5
t
t
AC,
AC,
t
AC
t
RAS
t
RCD
t
RP
t
RRD
Registered, PLL/Diff. Clock
15ns (-262/-26A/-265/-202)
0.75ns (-262/-26A/-265)
0.75ns (-262/-26A/-265)
7.5ns (-335/-262/-26A)
20ns (-202/-265/-26A)
20ns (-202/-265/-26A)
45ns (-262/-26A/-265)
ENTRY (VERSION)
Fast/Concurrent AP
10ns (-265/-202)
30
7ns (-262/-26A)
SDRAM DDR
0.70ns (-335)
7.5ns (-265)
0.8ns (-202)
0.8ns (-202)
7.81µs/SELF
18ns (-335)
15ns (-262)
18ns (-335)
15ns (-262)
42ns (-335)
40ns (-202)
12ns (-335)
8ns (-202)
SSTL 2.5V
6ns(-335)
0.7(-335)
10 or 11
1 clock
2, 4, 8
2, 2.5
ECC
128
256
N/A
N/A
13
72
1
0
8
8
4
0
1
256MB, 512MB (x72, ECC, SR)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
MT9VDDF3272
0D
0A
A0
2A
2D
80
08
07
01
48
00
04
60
70
75
80
70
75
80
02
82
08
08
01
0E
04
0C
01
02
26
C0
75
70
75
80
00
00
48
3C
50
30
3C
48
3C
50
28
©2004 Micron Technology, Inc. All rights reserved.
MT9VDDF6472
0D
A0
2A
2D
80
08
07
0B
01
48
00
04
60
70
75
80
70
75
80
02
82
08
08
01
0E
04
0C
01
02
26
C0
75
70
75
80
00
00
48
3C
50
30
3C
48
3C
50
28