MT9VDDF6472Y-335F1 Micron Technology Inc, MT9VDDF6472Y-335F1 Datasheet - Page 32

MODULE DDR SDRAM 512MB 184-DIMM

MT9VDDF6472Y-335F1

Manufacturer Part Number
MT9VDDF6472Y-335F1
Description
MODULE DDR SDRAM 512MB 184-DIMM
Manufacturer
Micron Technology Inc

Specifications of MT9VDDF6472Y-335F1

Memory Type
DDR SDRAM
Memory Size
512MB
Speed
167MHz
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184RDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
512Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.575A
Number Of Elements
9
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1293
MT9VDDF6472Y-335F1
Table 23: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
NOTE:
pdf: 09005aef80e119b2, source: 09005aef807d56a1
DDF9C32_64x72G.fm - Rev. B 9/04 EN
99-127 Manufacturer-specific Data (RSVD)
1. Value for -26A
2. The value of
3. The JEDEC SPD specification allows fast or slow slew rate values for these bytes. The worst-case (slow slew rate) value is
BYTE
95-98 Module Serial Number
94
repesented here. Systems requiring the fast slew rate setup and hold values are supported, provided the faster mini-
mum slew rate is met.
Week of Manufacture in BCD
t
RAS used for -26A/-265 modules is calculated from
t
CK set to 7ns (0x70) for optimum BIOS compatibility. Actual device spec. vaule is 7.5ns.
DESCRIPTION
ENTRY (VERSION)
32
t
RC -
256MB, 512MB (x72, ECC, SR)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
t
RP. Actual device spec value is 40 ns.
MT9VDDF3272
Variable Data
Variable Data
©2004 Micron Technology, Inc. All rights reserved.
MT9VDDF6472
Variable Data
Variable Data

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