MT18HTF12872AY-53EB1 Micron Technology Inc, MT18HTF12872AY-53EB1 Datasheet - Page 3
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MT18HTF12872AY-53EB1
Manufacturer Part Number
MT18HTF12872AY-53EB1
Description
MODULE SDRAM DDR2 1GB 240DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18HTF12872AY-53EB1.pdf
(18 pages)
Specifications of MT18HTF12872AY-53EB1
Memory Type
DDR2 SDRAM
Memory Size
1GB
Speed
533MT/s
Package / Case
240-DIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240UDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
50ps
Maximum Clock Rate
533MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.368A
Number Of Elements
18
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 85C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 6:
PDF: 09005aef80e8ad4d/Source: 09005aef80e785e6
HTF18C64_128_256_512x72A.fm - Rev. H 5/08 EN
MT18HTF51272AY-80E__
MT18HTF51272AY-800__
MT18HTF51272AY-667__
MT18HTF51272AY-53E__
MT18HTF51272AY-40E__
Part Number
Part Numbers and Timing Parameters – 4GB Modules
Base device: MT47H256M8
Notes:
1
1. All part numbers end with a two-place code (not shown) that designating component and
2. For component data sheets, refer to Micron’s Web
512MB, 1GB, 2GB, 4GB (x72, DR, ECC) 240-Pin DDR2 SDRAM UDIMM
PCB revisions. Consult factory for current revision codes. Example: MT18HTF12872AY-
667D4.
Module
Density
4GB
4GB
4GB
4GB
4GB
2
, 2Gb DDR2 SDRAM
Configuration
512 Meg x 72
512 Meg x 72
512 Meg x 72
512 Meg x 72
512 Meg x 72
3
Bandwidth
Module
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
site.
Memory Clock/
3.75ns/533 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
Data Rate
©2003 Micron Technology, Inc. All rights reserved.
(CL-
Latency
t
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
RCD-
Features
t
RP)