MT18HTF12872AY-53EB1 Micron Technology Inc, MT18HTF12872AY-53EB1 Datasheet - Page 5
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MT18HTF12872AY-53EB1
Manufacturer Part Number
MT18HTF12872AY-53EB1
Description
MODULE SDRAM DDR2 1GB 240DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18HTF12872AY-53EB1.pdf
(18 pages)
Specifications of MT18HTF12872AY-53EB1
Memory Type
DDR2 SDRAM
Memory Size
1GB
Speed
533MT/s
Package / Case
240-DIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240UDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
50ps
Maximum Clock Rate
533MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.368A
Number Of Elements
18
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 85C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 8:
PDF: 09005aef80e8ad4d/Source: 09005aef80e785e6
HTF18C64_128_256_512x72A.fm - Rev. H 5/08 EN
RAS#, CAS#, WE#
BA0, BA1, BA2
DQS0#–DQS8#
(512MB, 1GB)
DQS0–DQS8,
ODT0, ODT1
CKE0, CKE1
DQ0–DQ63
CK0, CK0#,
CK1, CK1#,
(2GB, 4GB)
(1GB, 2GB)
DM0–DM8
CK2, CK2#
V
BA0, BA1
SA0–SA2
CB0–CB7
Symbol
(512MB)
S0#, S1#
A0–A12
A0–A13
A0–A14
DD
V
(4GB)
SDA
V
DDSPD
RFU
SCL
V
NC
/V
REF
SS
DD
Q
Pin Descriptions
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
Supply
Supply
Supply
Supply
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Type
I/O
I/O
I/O
I/O
–
–
512MB, 1GB, 2GB, 4GB (x72, DR, ECC) 240-Pin DDR2 SDRAM UDIMM
On-die termination: ODT (registered HIGH) enables termination resistance internal to
the DDR2 SDRAM. When enabled, ODT is only applied to the following pins: DQ, DQS,
DQS#, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.
Clock: CK and CK# are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and negative edge of CK#. Output
data (DQs and DQS/DQS#) is referenced to the crossings of CK and CK#.
Clock enable: CKE (registered HIGH) activates and CKE (registered LOW) deactivates
clocking circuitry on the DDR2 SDRAM.
Chip select: S# enables (registered LOW) and disables (registered HIGH) the command
decoder.
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.
Bank address inputs: BA0–BA1/BA2 define to which device bank an ACTIVE, READ,
WRITE, or PRECHARGE command is being applied. BA0–BA1/BA2 define which mode
register, including MR, EMR, EMR(2), and EMR(3), is loaded during the LOAD MODE
command.
Address inputs: Provide the row address for ACTIVE commands, and the column address
and auto precharge bit (A10) for READ/WRITE commands, to select one location out of
the memory array in the respective bank. A10 sampled during a PRECHARGE command
determines whether the PRECHARGE applies to one device bank (A10 LOW, device bank
selected by BA0–BA1/BA2) or all device banks (A10 HIGH). The address inputs also provide
the op-code during a LOAD MODE command.
Serial clock for presence-detect: SCL is used to synchronize the presence-detect data
transfer to and from the module.
Presence-detect address inputs: These pins are used to configure the presence-detect
device.
Data input mask: DM is an input mask signal for write data. Input data is masked when
DM is sampled HIGH, along with that input data, during a write access. DM is sampled on
both edges of DQS. Although DM pins are input-only, the DM loading is designed to
match that of DQ and DQS pins.
Data strobe: Output with read data, input with write data for source synchronous
operation. Edge-aligned with read data, center-aligned with write data. DQS# is only
used when differential data strobe mode is enabled via the LOAD MODE command.
Data input/output: Bidirectional data bus.
Check bits.
Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and
data into and out of the presence-detect portion of the module.
Power supply: 1.8V ±0.1V.
SSTL_18 reference voltage.
Ground.
Serial EEPROM positive power supply: +1.7V to +3.6V.
No connect: These pins should be left unconnected.
Reserved for future use.
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Description
Pin Assignments and Descriptions
©2003 Micron Technology, Inc. All rights reserved.