MT18LSDT12872AG-133C1 Micron Technology Inc, MT18LSDT12872AG-133C1 Datasheet - Page 12

• Manufacturer Part Number: MT18LSDT12872AG-133C1
• Description: MODULE SDRAM 1GB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18LSDT12872AG-133C1

• Memory Type: SDRAM
• Memory Size: 1GB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168UDIMM
• Device Core Size: 72b
• Organization: 128Mx72
• Total Density: 1GByte
• Chip Density: 512Mb
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 1.157A
• Number Of Elements: 18
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 6:
CAS Latency
Operating Mode
PDF: 09005aef8088b1bf/Source: 09005aef808807ca
SD9_18C64_128X72AG.fm - Rev. C 6/05 EN
CAS Latency Diagram
COMMAND
COMMAND
The CAS latency is the delay, in clock cycles, between the registration of a READ com-
mand and the availability of the first piece of output data. The latency can be set to two
or three clocks.
If a READ command is registered at clock edge n, and the latency is m clocks, the data
will be available by clock edge n + m. The DQs will start driving as a result of the clock
edge one cycle earlier (n + m - 1), and provided that the relevant access times are met,
the data will be valid by clock edge n + m. For example, assuming that the clock cycle
time is such that all relevant access times are met, if a READ command is registered at T0
and the latency is programmed to two clocks, the DQs will start driving after T1 and the
data will be valid by T2, as shown in Figure 6. Table 7 on page 13, indicates the operating
frequencies at which each CAS latency setting can be used.
Reserved states should not be used as unknown operation or incompatibility with future
versions may result.
The normal operating mode is selected by setting M7 and M8 to zero; the other combi-
nations of values for M7 and M8 are reserved for future use and/or test modes. The pro-
grammed burst length applies to both READ and WRITE bursts.
Test modes and reserved states should not be used because unknown operation or
incompatibility with future versions may result.
CLK
CLK
DQ
DQ
512MB (SR), 1GB (DR): (x72, ECC) 168-Pin SDRAM UDIMM
READ
READ
T0
T0
CAS latency = 2
NOP
NOP
T1
T1
12
t
t AC
LZ
CAS latency = 3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T2
NOP
T2
NOP
t
t AC
D
LZ
t OH
OUT
Mode Register Definition
T3
T3
NOP
D
t OH
OUT
DON’T CARE
UNDEFINED
©2002 Micron Technology, Inc. All rights reserved.
T4