MT18LSDT12872AG-133C1 Micron Technology Inc, MT18LSDT12872AG-133C1 Datasheet - Page 15
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MT18LSDT12872AG-133C1
Manufacturer Part Number
MT18LSDT12872AG-133C1
Description
MODULE SDRAM 1GB 168DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18LSDT12872AG-133C1.pdf
(29 pages)
Specifications of MT18LSDT12872AG-133C1
Memory Type
SDRAM
Memory Size
1GB
Speed
133MHz
Package / Case
168-DIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
168UDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
1.157A
Number Of Elements
18
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 65C
Operating Temperature Classification
Commercial
Pin Count
168
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 11:
I
Table 12:
Table 13:
PDF: 09005aef8088b1bf/Source: 09005aef808807ca
SD9_18C64_128X72AG.fm - Rev. C 6/05 EN
Parameter/Condition
Parameter/Condition
Parameter/Condition
Output leakage current: DQ pins are
disabled; 0V ≤ V
Output levels:
Output High Voltage (I
Output Low Voltage (I
Operating current: active mode; Burst = 2; READ or WRITE;
(MIN)
Standby current: Power-Down mode; All device banks idle; CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH; All device
banks active after
Operating current: Burst Mode; Continuous burst; READ or WRITE; All
device banks active
Auto refresh current:
CKE = HIGH; CS# = HIGH
Self refresh current: CKE ≤ 0.2V
Operating current: Active Mode; Burst = 2; READ or WRITE;
(MIN)
Standby current: Power-Down mode; All device banks idle; CKE = LOW
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All device
banks active after
Operating current: Burst mode; Continuous burst; READ or WRITE; All
device banks active
Auto refresh current:
CKE = HIGH; CS# = HIGH
Self refresh current: CKE ≤ 0.2V
DD
Specifications and Conditions
DC Electrical Characteristics and Operating Conditions – 1GB (continued)
Notes: 1, 5, 6; notes appear on page 19; V
I
Notes: 1, 5, 6, 11, 13; notes appear on page 19; V
I
Notes: 1, 5, 6, 11, 13; notes appear on page 19; V
DD
DD
OUT
Specifications and Conditions – 512MB
Specifications and Conditions – 1GB
t
t
RCD met; No accesses in progress
RCD met; No accesses in progress
≤ V
OUT
OUT
DD
Note:
Q
= 4mA)
= -4mA)
a - Value calculated as one module rank in this condition, and all other module ranks in
power-down mode (I
b - Value calculated reflects all module ranks in this condition.
512MB (SR), 1GB (DR): (x72, ECC) 168-Pin SDRAM UDIMM
DQ
t
t
t
t
RFC =
RFC = 7.8125µs
RFC =
RFC = 7.8125µs
DD 2
DD
).
= V
t
t
15
RC =
t
t
RC =
RFC (MIN)
RFC (MIN)
DD
DD
DD
Q = +3.3V ±0.3V
t
, V
t
= V
RC
RC
DD
DD
Symbol
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q = +3.3V ±0.3V; SDRAM component values only
V
Q = +3.3V ±0.3V; SDRAM component values only
V
I
OZ
OH
OL
Symbol
Symbol
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
1
2
3
4
5
6
7
1
2
3
4
5
6
7
a
b
a
a
b
b
b
Specifications and Conditions
Min
-10
2.4
–
1,080
1,125
2,205
1,112
1,157
7,200
-13E
-13E
405
437
180
108
32
54
54
63
Max
Max
Max
1,125
2,205
1,008
1,157
7,200
-133
-133
0.4
©2002 Micron Technology, Inc. All rights reserved.
10
990
405
437
180
108
–
32
54
54
63
Units
Units
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
V
V
3, 18, 19,
3, 18, 19,
3, 18, 19,
3, 18, 19,
3, 18, 19,
3, 18, 19,
Notes
18, 19,
Notes
18, 19,
30, 31
30, 31
Notes
3, 12
3, 12
30
30
30
30
30
30
30
30
33
4
4