MT18LSDT12872AG-133C1 Micron Technology Inc, MT18LSDT12872AG-133C1 Datasheet - Page 15

• Manufacturer Part Number: MT18LSDT12872AG-133C1
• Description: MODULE SDRAM 1GB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18LSDT12872AG-133C1

• Memory Type: SDRAM
• Memory Size: 1GB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168UDIMM
• Device Core Size: 72b
• Organization: 128Mx72
• Total Density: 1GByte
• Chip Density: 512Mb
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 1.157A
• Number Of Elements: 18
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 11:
I
Table 12:
Table 13:
PDF: 09005aef8088b1bf/Source: 09005aef808807ca
SD9_18C64_128X72AG.fm - Rev. C 6/05 EN
Parameter/Condition
Parameter/Condition
Parameter/Condition
Output leakage current: DQ pins are
disabled; 0V ≤ V
Output levels:
Output High Voltage (I
Output Low Voltage (I
Operating current: active mode; Burst = 2; READ or WRITE;
(MIN)
Standby current: Power-Down mode; All device banks idle; CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH; All device
banks active after
Operating current: Burst Mode; Continuous burst; READ or WRITE; All
device banks active
Auto refresh current:
CKE = HIGH; CS# = HIGH
Self refresh current: CKE ≤ 0.2V
Operating current: Active Mode; Burst = 2; READ or WRITE;
(MIN)
Standby current: Power-Down mode; All device banks idle; CKE = LOW
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All device
banks active after
Operating current: Burst mode; Continuous burst; READ or WRITE; All
device banks active
Auto refresh current:
CKE = HIGH; CS# = HIGH
Self refresh current: CKE ≤ 0.2V
DD
Specifications and Conditions
DC Electrical Characteristics and Operating Conditions – 1GB (continued)
Notes: 1, 5, 6; notes appear on page 19; V
I
Notes: 1, 5, 6, 11, 13; notes appear on page 19; V
I
Notes: 1, 5, 6, 11, 13; notes appear on page 19; V
DD
DD
OUT
Specifications and Conditions – 512MB
Specifications and Conditions – 1GB
t
t
RCD met; No accesses in progress
RCD met; No accesses in progress
≤ V
OUT
OUT
DD
Note:
Q
= 4mA)
= -4mA)
a - Value calculated as one module rank in this condition, and all other module ranks in
power-down mode (I
b - Value calculated reflects all module ranks in this condition.
512MB (SR), 1GB (DR): (x72, ECC) 168-Pin SDRAM UDIMM
DQ
t
t
t
t
RFC =
RFC = 7.8125µs
RFC =
RFC = 7.8125µs
DD 2
DD
).
= V
t
t
15
RC =
t
t
RC =
RFC (MIN)
RFC (MIN)
DD
DD
DD
Q = +3.3V ±0.3V
t
, V
t
= V
RC
RC
DD
DD
Symbol
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q = +3.3V ±0.3V; SDRAM component values only
V
Q = +3.3V ±0.3V; SDRAM component values only
V
I
OZ
OH
OL
Symbol
Symbol
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
1
2
3
4
5
6
7
1
2
3
4
5
6
7
a
b
a
a
b
b
b
Specifications and Conditions
Min
-10
2.4
–
1,080
1,125
2,205
1,112
1,157
7,200
-13E
-13E
405
437
180
108
32
54
54
63
Max
Max
Max
1,125
2,205
1,008
1,157
7,200
-133
-133
0.4
©2002 Micron Technology, Inc. All rights reserved.
10
990
405
437
180
108
–
32
54
54
63
Units
Units
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
V
V
3, 18, 19,
3, 18, 19,
3, 18, 19,
3, 18, 19,
3, 18, 19,
3, 18, 19,
Notes
18, 19,
Notes
18, 19,
30, 31
30, 31
Notes
3, 12
3, 12
30
30
30
30
30
30
30
30
33
4
4