MT9VDDT6472PHG-335F2 Micron Technology Inc, MT9VDDT6472PHG-335F2 Datasheet - Page 2

• Manufacturer Part Number: MT9VDDT6472PHG-335F2
• Description: MODULE DDR SDRAM 512MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDT6472PHG-335F2

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 200SODIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.4A
• Number Of Elements: 9
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 2:
NOTE:
pdf: 09005aef808ffe58, source: 09005aef808ffdc7
DD9C16_32_64_128x72PHG.fm - Rev. B 9/04 EN
PART NUMBER
MT9VDDT1672PHG-335_
MT9VDDT1672PHY-335_
MT9VDDT1672PHG-262_
MT9VDDT1672PHY-262_
MT9VDDT1672PHG-26A_
MT9VDDT1672PHY-26A_
MT9VDDT1672PH(I)G-265_
MT9VDDT1672PH(I)Y-265_
MT9VDDT3272PHG-335_
MT9VDDT3272PHY-335_
MT9VDDT3272PHG-262_
MT9VDDT3272PHY-262_
MT9VDDT3272PHG-26A_
MT9VDDT3272PHY-26A_
MT9VDDT3272PH(I)G-265_
MT9VDDT3272PH(I)Y-265_
MT9VDDT6472PHG-335_
MT9VDDT6472PHY-335_
MT9VDDT6472PHG-262_
MT9VDDT6472PHY-262_
MT9VDDT6472PHG-26A_
MT9VDDT6472PHY-26A_
MT9VDDT6472PH(I)G-265_
MT9VDDT6472PH(I)Y-265_
MT9VDDT12872PHG-335_
MT9VDDT12872PHY-335_
MT9VDDT12872PHG-262_
MT9VDDT12872PHY-262_
MT9VDDT12872PHG-26A_
MT9VDDT12872PHY-26A_
MT9VDDT12872PH(I)G-265_
MT9VDDT12872PH(I)Y-265_
All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for
current revision codes. Example: MT9VDDT3272PHG-265A1.
Part Numbers and Timing Parameters
MODULE
DENSITY
128MB
128MB
128MB
128MB
128MB
128MB
128MB
128MB
256MB
256MB
256MB
256MB
256MB
256MB
256MB
256MB
512MB
512MB
512MB
512MB
512MB
512MB
512MB
512MB
1GB
1GB
1GB
1GB
1GB
1GB
1GB
1GB
128MB, 256MB, 512MB, 1GB (x72, ECC, PLL, SR)
CONFIGURATION
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
16 Meg x 72
16 Meg x 72
16 Meg x 72
16 Meg x 72
16 Meg x 72
16 Meg x 72
16 Meg x 72
16 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
2
BANDWIDTH
MODULE
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
200-PIN DDR SDRAM SODIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MEMORY CLOCK/
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
7.5ns, 266 MT/s
6ns, 333 MT/s
6ns, 333 MT/s
6ns, 333 MT/s
6ns, 333 MT/s
6ns, 333 MT/s
6ns, 333 MT/s
6ns, 333 MT/s
6ns, 333 MT/s
DATA RATE
©2004 Micron Technology, Inc. All rights reserved.
CLOCK LATENCY
(CL -
ADVANCE
2.5-3-3
2.5-3-3
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2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
t
2-2-2
2-2-2
2-3-3
2-3-3
2-2-2
2-2-2
2-3-3
2-3-3
2-2-2
2-2-2
2-3-3
2-3-3
2-2-2
2-2-2
2-3-3
2-3-3
RCD -
t
RP)