MT9HTF6472RHY-667D1 Micron Technology Inc, MT9HTF6472RHY-667D1 Datasheet - Page 12
![MODULE DDR2 512MB 200-SORDIMM](/photos/7/83/78386/mfg_mt_rdimm_series_sml.jpg)
MT9HTF6472RHY-667D1
Manufacturer Part Number
MT9HTF6472RHY-667D1
Description
MODULE DDR2 512MB 200-SORDIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT9HTF6472RHY-667D1.pdf
(24 pages)
Specifications of MT9HTF6472RHY-667D1
Memory Type
DDR2 SDRAM
Memory Size
512MB
Speed
667MT/s
Package / Case
200-SORDIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT9HTF6472RHY-667D1
Manufacturer:
FREESCALE
Quantity:
9 240
Table 10: DDR2 I
Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
PDF: 09005aef828742dd
htf9c64_128x72rh.pdf - Rev. D 3/10 EN
Parameter
Operating one bank active-precharge current:
(I
Address bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current: I
= CL (I
t
puts are switching; Data pattern is same as I
Precharge power-down current: All device banks idle;
LOW; Other control and address bus inputs are stable; Data bus inputs are float-
ing
Precharge quiet standby current: All device banks idle;
is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data bus
inputs are floating
Precharge standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Data bus
inputs are switching
Active power-down current: All device banks open;
t
stable; Data bus inputs are floating
Active standby current: All device banks open;
MAX (I
Other control and address bus inputs are switching; Data bus inputs are switching
Operating burst write current: All device banks open; Continuous burst
writes; BL = 4, CL = CL (I
t
are switching; Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst read,
I
t
inputs are switching; Data bus inputs are switching
Burst refresh current:
interval; CKE is HIGH, S# is HIGH between valid commands; Other control and
address bus inputs are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and ad-
dress bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current: All device banks interleaving
reads; I
(I
HIGH between valid commands; Address bus inputs are stable during deselects;
Data bus inputs are switching
RCD (I
CK (I
RP (I
OUT
RP =
DD
DD
),
),
= 0mA; BL = 4, CL = CL (I
DD
DD
t
t
t
RAS =
DD
RP (I
RC =
DD
DD
OUT
); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs
); CKE is LOW; Other control and address bus inputs are
), AL = 0;
); CKE is HIGH, S# is HIGH between valid commands; Address bus in-
),
DD
= 0mA; BL = 4, CL = CL (I
t
t
RP =
RC (I
t
); CKE is HIGH, S# is HIGH between valid commands; Address bus
RAS MIN (I
DD
t
RP (I
t
CK =
),
DD
t
RRD =
DD
Specifications and Conditions – 1GB
DD
DD
t
t
); CKE is HIGH, S# is HIGH between valid commands;
CK (I
CK =
), AL = 0;
); CKE is HIGH, S# is HIGH between valid commands;
t
RRD (I
DD
DD
t
CK (I
), AL = 0;
),
t
RC =
DD
DD
DD
t
512MB, 1GB (x72, ECC, SR) 200-Pin DDR2 SDRAM SORDIMM
CK =
),
); REFRESH command at every
), AL =
t
t
RCD =
RC (I
t
CK =
t
CK (I
DD4W
DD
t
RCD (I
t
t
),
DD
RCD (I
CK (I
t
),
RAS =
t
CK =
t
t
DD
RAS =
CK =
DD
t
DD
CK =
) - 1 ×
),
t
); CKE is HIGH, S# is
t
CK =
t
t
RAS MIN (I
CK (I
RAS =
t
CK (I
t
OUT
t
CK =
t
RAS MAX (I
t
CK (I
CK =
12
t
CK (I
DD
= 0mA; BL = 4, CL
DD
t
),
t
DD
RAS MAX (I
CK (I
),
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
t
t
DD
CK (I
); CKE is
RAS =
t
DD
RC =
);
t
RFC (I
DD
),
t
DD
DD
CK =
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
); CKE is
RCD =
t
t
),
); CKE
RC
RAS
DD
t
RP =
DD
t
CK
)
),
Symbol
I
I
I
I
I
I
I
I
DD3PF
DD3PS
DD4W
DD2Q
I
I
DD2N
DD3N
DD4R
I
I
I
DD2P
DD0
DD1
DD5
DD6
DD7
-80E/
1440
1440
2115
3015
800
810
990
450
450
360
540
63
90
63
© 2007 Micron Technology, Inc. All rights reserved.
I
DD
-667
1215
1215
1935
2520
765
900
360
360
270
495
63
90
63
Specifications
1125
1125
1890
2430
-53E
630
855
360
360
270
405
63
90
63
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA